PART |
Description |
Maker |
APT18F60B APT38F80L APT29F100L APT29F80J APT21M100 |
15 A, 600 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB ROHS COMPLIANT, 3 PIN 22 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA ROHS COMPLIANT, T-MAX, 3 PIN 1000V, 29A, 0.46Max, trr ÷270ns N-Channel FREDFET 17 A, 1000 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA Power FREDFET; Package: ISOTOP®; ID (A): 31; RDS(on) (Ohms): 0.21; BVDSS (V): 800; 44 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET 31 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET Power FREDFET; Package: TO-247 [B]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000; 53 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 24 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
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Microsemi, Corp. MICROSEMI CORP
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MTB4N80E_D ON2428 ON2426 MTB4N80E |
TMOS POWER FET 4.0 AMPERES 800 VOLTS 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system
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Motorola Mobility Holdings, Inc. ON Semi MOTOROLA[Motorola, Inc]
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SCN-2-11 SCN-2-15 SCN-2-19 SCN-2-22 SCN-2-27 SCN-S |
Power Splitters/Combiners 2 Way-0° 50 800 to 2700 MHz Power Splitters/Combiners 2 Way-0° 50?/a> 800 to 2700 MHz Power Splitters/Combiners 2 Way-050з 800 to 2700 MHz 800 MHz - 1175 MHz RF/MICROWAVE COMBINER, 0.8 dB INSERTION LOSS Power Splitters/Combiners 2 Way-050з 800 to 2700 MHz 1425 MHz - 1900 MHz RF/MICROWAVE COMBINER, 0.9 dB INSERTION LOSS
|
http:// Mini-Circuits
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PA1220 |
800-1000 MHz. Low Noise High Dynamic Range Linear Amplifier 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
Tyco Electronics
|
ZX10-4-19 ZX10-4-11 ZX10-4-SERIES ZX10-4-14 ZX10-4 |
Power Splitters/Combiners 4 Way-050з 800 to 2700 MHz 功率分配合路4路,0Σ50з800700 MHz Power Splitters/Combiners 4 Way-0° 50 800 to 2700 MHz
|
Mini-Circuits
|
APT22F80B APT22F80S |
N-Channel FREDFET Power FREDFET; Package: TO-247 [B]; ID (A): 23; RDS(on) (Ohms): 0.43; BVDSS (V): 800; 23 A, 800 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Microsemi Corporation Microsemi, Corp.
|
PD60-AMPS/GSMSERIES PD60-0015-06S |
High Power Transmit Combiners For AMPS/GSM 800960 MHz 高功率发射合路的AMPS /兆赫的GSM八十万?九百六十零 800 MHz - 960 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
|
TOKO, Inc.
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APT802R8AN APT8030CFN |
4.5 A, 800 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 29 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
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SPA06N80C308 SPA06N80C3 |
6 A, 800 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB CoolMOSTM Power Transistor
|
Infineon Technologies AG
|
IRFD220 |
0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET 0.8A/ 200V/ 0.800 Ohm/ N-Channel Power MOSFET
|
Intersil Corporation
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