| PART |
Description |
Maker |
| BC369 C62702-C748 |
From old datasheet system
PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BC337 BC337-25 BC337-40 Q62702-C314-V3 BC337-16 BC |
Si-Epitaxial PlanarTransistors
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) NPN硅晶体管自动对焦（高电流增益高集电极电流低集电极发射极饱和电压）
|
Siemens Semiconductor G...
Diotec Elektronische
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 2SD1691 |
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
|
Unisonic Technologies
|
| DP100S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
| PS21961-4 |
IGBT Module; Continuous Collector Current, Ic:3A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:21.3W; Collector Emitter Voltage, Vceo:600V; Package/Case:Super Mini
|
POWEREX INC
|
| 2SD2402 |
High current capacitance. Low collector saturation voltage.
|
TY Semiconductor Co., Ltd
|
| 2SB906 |
Low collector saturation voltage. High power dissipation.
|
TY Semiconductor Co., Ltd
|
| KSB1151 |
PNP (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT)
|
SAMSUNG[Samsung semiconductor]
|
| SMBTA5607 |
PNP Silicon AF Transistor Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
| DN500F |
NPN Silicon Transistor (Extremely low collector-to-emitter saturation voltage)
|
AUK[AUK corp]
|
| DP100 |
Extremely low collector-to-emitter saturation voltage
PNP Silicon Transistor
|
KODENSHI KOREA CORP.
AUK corp
|
