| PART |
Description |
Maker |
| MGF4936AM |
Low Noise GaAs HEMT
|
Mitsubishi Electric Semiconductor
|
| MGF4953B11 |
Low Noise GaAs HEMT
|
Mitsubishi Electric Semiconductor
|
| HMC-ALH50909 |
GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz
|
Hittite Microwave Corporation
|
| HMC-ALH45910 |
GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz
|
Hittite Microwave Corporation
|
| HMC753LP4E11 |
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 11 GHz
|
Hittite Microwave Corporation
|
| HMC-ALH216 |
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz
|
Hittite Microwave Corporation
|
| HMC-ALH444 |
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz
|
Hittite Microwave Corporation
|
| HMC504LC4B |
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz
|
Hittite Microwave Corporation
|
| HMC-ALH364 HMC-ALH36409 |
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 32 GHz
|
Hittite Microwave Corporation
|
| 2SK3001 |
GaAs HEMT Low Noise Amplifier
Silicon NPN Triple Diffused
From old datasheet system
|
Hitachi Semiconductor
|
| CFY25-20 CFY25-17 CFY25-23 Q62703-F107 Q62703-F106 |
Advanced PFC/PWM Combination Controllers 20-SOIC -40 to 105
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) 砷化镓场效应管（低噪声高增益对于前端放大器离子注入平面结构全部镀金）
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
|
SIEMENS AG
|
| Q62703-F108 Q62703-F106 CFY25 Q62703-F107 CFY25-17 |
From old datasheet system
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
|
SIEMENS[Siemens Semiconductor Group]
|
