| PART |
Description |
Maker |
| YGV641 |
Cutting-edge GDC with Sprite Architecture
|
YAMAHA CORPORATION
|
| M5LV-320_192-10AI M5LV-512_104-6AC M5-192_74-15YC |
IND SHLD 3.3UH 9A RMS SMT
Fifth Generation MACH Architecture EE PLD, 7.5 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 12 ns, PBGA256
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP240
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP144
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP208
10-Bit Broadband Modem Mixed Signal Front End (MxFE®); Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Industrial EE PLD, 12 ns, PQFP144
12-Bit Broadband Modem Mixed Signal Front End (MxFE®); Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Commercial EE PLD, 15 ns, PQFP144
12-Bit Broadband Modem Mixed Signal Front End (MxFE®); Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Industrial EE PLD, 15 ns, PQFP144
Fifth Generation MACH Architecture EE PLD, 6.5 ns, PQFP240
CONNECTOR ACCESSORY EE PLD, 10 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 7.5 ns, PBGA352
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 20 ns, PBGA352
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 10 ns, PBGA352
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP240
Fifth Generation MACH Architecture EE PLD, 10 ns, PBGA256
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP240
Fifth Generation MACH Architecture EE PLD, 6.5 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP208
CONNECTOR ACCESSORY EE PLD, 12 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP240
Fifth Generation MACH Architecture
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
|
| CY7C1350F CY7C1350F-100AC CY7C1350F-100AI CY7C1350 |
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.8 ns, PBGA119
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 4.5 ns, PQFP100
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.6 ns, PBGA119
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.6 ns, PQFP100
CABLE ASSEMBLY; LEAD-FREE SOLDER; SMA MALE TO SMA MALE; 50 OHM, PE-SR047FL (.047" RE-SHAPABLE) 128K X 36 ZBT SRAM, 3.5 ns, PQFP100
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.8 ns, PQFP100
4-Mb (128K x 36) Pipelined SRAM with Nobl(TM) Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| M5LV-256_104-10VC M5LV-256_104-10VI M5LV-256_104-1 |
7ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device)
20ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device)
10ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device)
12ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device)
15ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device)
|
LATTICE[Lattice Semiconductor]
|
| CY7C1550KV18-450BZC CY7C1550KV18-400BZC CY7C1548KV |
Sync SRAM; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor, Corp.
|
| CY7C1518KV18-300BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1352F CY7C1352F-100AC CY7C1352F-100AI CY7C1352 |
4-Mbit (256Kx18) Pipelined SRAM with NoBLArchitecture 256K X 18 ZBT SRAM, 2.8 ns, PQFP100
4-Mbit (256Kx18) Pipelined SRAM with NoBL(TM) Architecture
4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture
4-Mbit (256Kx18) Pipelined SRAM with NoBL⑩ Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的（256 × 36/512K × 18）流体系结构，通过与总线延迟静态存储器
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CAT93C46AJ CAT93C46AJI CAT93C46AJI-2.5 CAT93C46AJ- |
72-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
72-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
256K (32K x 8) Static RAM
256 Kb (256K x 1) Static RAM
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
Microwire Serial EEPROM 微型导线串行EEPROM
|
Atmel, Corp.
|
| CY7C1568KV18-500BZXC CY7C1568KV18-500BZC CY7C1570K |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| D09S33E4GX00LF 609-1487 D09S33E6GX00LF C01-8646-01 |
SOKET CONNECT. DELTA D RIGHT ANGLE WITH NUT, HARPOON AND METAL PLATE
SOCKET CONNECT,DELTA D RIGHT ANGLE WITH NUT. HARPOON AND METAL PLATE
|
FCI connector
|
|
