PART |
Description |
Maker |
JANSG2N2907AUBC JANSM2N2906A JANSM2N2906AL JANSM2N |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
JANSM2N2904 JANSM2N2905AL 2N2904E3 JANSR2N2904 JAN |
BJT( BiPolar Junction Transistor) PNP Transistor
|
Microsemi
|
30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
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MDE Semiconductor
|
MMBT2132T306 MMBT2132T3G MMBT2132T3 |
General Purpose Transistors NPN Bipolar Junction Transistor
|
ONSEMI[ON Semiconductor]
|
SBF13007 |
36W Bipolar Junction Transistor, 8A Ic, 400V Vceo, 700V Vces
|
SemiWell Semiconductor
|
MMBT2131T3 MMBT2131T1 ON2108 |
GENERAL PURPOSE TRANSISTORS From old datasheet system PNP Bipolar Junction Transistor
|
ONSEMI[ON Semiconductor]
|
2SB1184 2SB1243 2SB1243R 2SB1243Q 2SB1184P |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-252AA 晶体管|晶体管|进步党| 50V五(巴西)总裁| 3A条一(c)|52AA 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | SIP Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
HIROSE ELECTRIC Co., Ltd. ROHM
|
SDT13204 SDT1617 SDT1618 SDT1621 SDT1622 SDT1623 S |
TRANSISTOR | BJT | NPN | 175V V(BR)CEO | 5A I(C) | TO-66 TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | NPN | 175V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 125V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | TO-39 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-66 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | STR-10 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-111 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | STR-10 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-5 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 550V V(BR)CEO | 5A I(C) | TO-210AC TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 5A I(C) | TO-210AC TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-66 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | STR-10 TRANSISTOR | BJT | NPN | 600V V(BR)CEO | 5A I(C) | TO-210AC TRANSISTOR | BJT | NPN | 750V V(BR)CEO | 5A I(C) | TO-210AC TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-66 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 10A I(C) | TO-66 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | TO-66 TRANSISTOR | BJT | NPN | 750V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 5A I(C) | TO-3 晶体管|晶体管|叩| 60V的五(巴西)总裁| 5A条一c)|11 晶体管|晶体管|叩| 40V的五(巴西)总裁| 5A条一c)|11 晶体管|晶体管|叩| 80V的五(巴西)总裁| 5A条一c)|11 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 10A I(C) | TO-210AC 晶体管|晶体管| npn型| 120伏特五(巴西)总裁| 10A条一(c)|10AC TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-5 晶体管|晶体管|叩| 50V五(巴西)总裁| 5A条一(c)| TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-210AC 晶体管|晶体管|叩| 400V五(巴西)总裁| 10A条一(c)|10AC
|
Serpac Electronic Enclosures Atmel, Corp. AUK, Corp.
|
DCX69-13 DCX69-16 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
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Diodes
|
FZT788B |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
|
Diodes
|
2DB1697 2DB1697-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
|
Diodes
|
ZXTD618MC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
|
Diodes
|