| PART |
Description |
Maker |
| N25Q256A11ESF40 N25Q256A11ESF40F N25Q256A11E1240 |
Micron Serial NOR Flash Memory
|
Micron Technology
|
| MG2RTP |
Rad Hard 0.5 Micron Sea of Gates
|
Atmel
|
| STD80 |
0.5 Micron STD80 Standard Cell Library Introduction
|
Samsung Electronic
|
| UPD65003 UPD65010 UPD65020 |
(UPD65000 Series) 3-Micron CMOS Gate Arrays
|
NEC Electronics
|
| 251748-007 |
Intel Celeron Processor on 0.13 Micron Process in the 478-Pin Package
|
Intel Corporation
|
| N25Q032A11EF640F |
Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 4KB Sector Erase
Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 4KB Sector Erase
|
Micron Technology
|
| MRF9030LSR1 MRF9030 MRF9030D MRF9030LR1 |
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| MRF9060MBR1 MRF9060MR1 |
The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
|
Motorola, Inc.
|
| MRF9045MR1 |
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
|
Motorola, Inc
|
| MRF9045M |
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
|
Motorola, Inc.
|
| ATC35 |
The ATC35 Cell-based ASIC (CBIC) family features a comprehensive library of 0.35-micron standard logic and I/O cells designed to operate with a supply voltage of 3.3V /- 0.3V and memory cells compiled to the precise requirements of the de
|
Atmel
|
