| PART |
Description |
Maker |
| ES3A-ES3J ES3D ES3J ES3G ES3B |
Glass Superfast Recovery Rectifiers
SURFACE MOUNT SUPER FAST GLASS PASSIVATED RECTIFERS
|
HY ELECTRONIC CORP.
http://
|
| UF2A-UF2M HS2A-HS2M HS2K UF2A UF2J |
Glass Ultrafast Recovery Rectifiers
Glass High Efficiency Rectifiers
SURFACE MOUNT HIGH EFFICIENCY (ULTRA FAST) GLASS PASSIVATED RECTIFIERS
|
HY ELECTRONIC CORP.
|
| UF1A-UF1M HS1A-HS1M UF1J |
SURFACE MOUNT HIGH EFFICIENCY (ULTRA FAST) GLASS PASSIVATED RECTIFIERS
Glass High Efficiency Rectifiers
Glass Ultrafast Recovery Rectifiers
|
HY ELECTRONIC CORP.
|
| 1N4007G |
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER, Reverse Voltage - 50 to 1300 Volts, Forward Current - 1.0Amperes
TECHNICAL SPECIFICATIONS OF GLASS PASSIVATED RECTIFIER
|
Chenyi Electronics
http://
|
| 135D306X0006C2 135D206X0010C2 135D476X0010C2 135D1 |
Wet Tantalum Capacitors, Axial, Tantalum-Case with Glass-to-Tantalum Hermetic Seal, for - 55°C to 200°C Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55?? to 200?? Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55∑C to 200∑C Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55隆?C to 200隆?C Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55掳C to 200掳C Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55°C to 200°C Operation
|
VISAY[Vishay Siliconix]
|
| BYV27100 BYV27150 BYV27200 BYV2750 BYV27 DIODESINC |
200V; 2.0A super-fast glass body rectifier
150V; 2.0A super-fast glass body rectifier
100V; 2.0A super-fast glass body rectifier
2.0A SUPER-FAST GLASS BODY RECTIFIER 安培的电流超快速整流玻璃钢车身
|
DIODES[Diodes Incorporated]
Diodes Inc.
Diodes, Inc.
|
| RU2GGF RU2JGF RU2AGF RU2BGF RU2DGF |
Ultra Fast Recovery Pack: DO-15
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.5A
(RU2AGF - RU2JGF) SINTERED GLASS JUNCTION
|
Gulf Semiconductor
|
| ES2A-ES2J ES2B ES2A ES2D |
Glass Superfast Recovery Rectifiers
SURFACE MOUNT GLASS SUPERFAST RECOVERY RECTIFERS
|
HY ELECTRONIC CORP.
|
| DO-204AH 1N5918B MZ4625 BZX79C7V5RL BZX79C10 BZX79 |
500 mW DO-35 Glass Zener Voltage Regulator Diodes
500mWDO-35GlassZenerVoltageRegulatorDiodes
GLASS ZENER DIODES 500 MILLIWATTS 1.8.200 VOLTS
|
MOTOROLA[Motorola, Inc]
EIC discrete Semiconductors
Motorola Inc
|
| FB1006 FB1010 FB1010L FB1009L FB1000 FB1000L FB100 |
10 Amp. Glass Passivated Bridge Rectifier 10安培。玻璃钝化整流桥
Bridge Rectifiers (Power) 桥式整流器（电力
10 Amp Glass Passivated Bridge Rectifier
10 Amp.Glass Passivated bridge rectifier
|
Fagor Electronics
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
|
| 1N4003G-A 1N4003G-B 1N4001G-A 1N4001G-B 1N4002G-B |
1.0A GLASS PASSIVATED RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
1.0A GLASS PASSIVATED RECTIFIER 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
1.0A GLASS PASSIVATED RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
1.0A GLASS PASSIVATED RECTIFIER 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41
1.0A GLASS PASSIVATED RECTIFIER 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
|
Diodes Inc.
Anderson Power Products, Inc.
Diodes, Inc.
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
