PART |
Description |
Maker |
RFP-400-100R RFP-800-100R |
Flanged Resistors 400 Watts, 100ohm Flanged Resistors 400 Watts, 100 ohm
|
Anaren Microwave
|
PTB20078 |
2.5 Watts, 1525660 MHz INMARSAT RF Power Transistor 2.5 Watts, 1525-1660 MHz INMARSAT RF Power Transistor 2.5瓦,16250年国际海事卫星组织兆赫射频功率晶体管
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
2729-170 |
170 Watts, 38 Volts, 100μs, 10% Radar 2700-2900 MHz 170 Watts, 38 Volts, 100渭s, 10% Radar 2700-2900 MHz 170 Watts, 38 Volts, 100刁, 10% Radar 2700-2900 MHz
|
MICROSEMI[Microsemi Corporation]
|
PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET 125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor 125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB Ericsson Microelectronics
|
PTF10021 |
30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30瓦,1.4-1.6 GHzGOLDMOS场效应晶体管 30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30 Watts, 1.4.6 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
|
G150N50W4A |
Flange Mount Termination 150 Watts, 50楼? Flange Mount Termination 150 Watts, 50Ω
|
Anaren Microwave
|
1617-35 |
COMPUTER PRODUCT 35 Watts/ 28 Volts/ Pulsed Radar 1540 - 1660 MHz 35 Watts 28 Volts Pulsed Radar 1540 - 1660 MHz 35 Watts, 28 Volts, Pulsed Radar 1540 - 1660 MHz
|
Electronic Theatre Controls, Inc. ETC[ETC] GHz Technology
|
PTB20145 |
9 Watts, 91560 MHz Cellular Radio RF Power Transistor 9 Watts, 915-960 MHz Cellular Radio RF Power Transistor 9瓦,915-960兆赫蜂窝无线电射频功率晶体管
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
PTF10137 |
12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 12瓦,1.0 GHz的GOLDMOS场效应晶体管 12 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson] Ericsson Microelectronics
|
MJ10009 MJ10009_D ON1969 |
From old datasheet system 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS
|
Motorola Inc ONSEMI[ON Semiconductor] MOTOROLA[Motorola, Inc]
|