| PART |
Description |
Maker |
| APT10SCD65KCT |
SiC Schottky Diodes
|
Microsemi
|
| LSIC2SD120C10 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
|
Littelfuse
|
| IDH03G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH20G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| LSIC2SD120A15 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
|
Littelfuse
|
| LSIC2SD120A20 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| 10-FZ06NBA084FP-M306L48 |
ultrafast IGBT with C6 MOSFET and SiC buck diodes
|
Vincotech
|
| BAT15-02L BAT15-02V BAT15-04W BAT15-05W BAT15 BAT1 |
Schottky Diodes - Silicon RF Schottky diode for DBS mixer applications up to 12 GHz
RESISTOR,SMD1206,1K,1/4W,5%
Silicon Schottky Diodes 硅肖特基二极
|
INFINEON[Infineon Technologies AG]
|
| FMDA-10565 |
SiC Schottky Diode
|
Sanken electric
|
| SML10SIC03NC |
SiC SCHOTTKY DIODE
|
Seme LAB
|
| WSD705 WSD706 |
Surface Mount Schottky Barrier Diodes
SMALL SIGNAL SCHOTTKY DIODES 30m AMPERES 40 VOLTS
|
Weitron Technology
ETC
|
| SCS215AJ |
SiC Schottky Barrier Diode
|
Rohm
|
