| PART |
Description |
Maker |
| 1214-32L |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 1214-110M |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 2731-20 |
Pulsed Power S-Band (Si)
|
Microsemi
|
| 2731-100M |
Pulsed Power S-Band (Si)
|
Microsemi
|
| AN561 |
WIDE BAND DESIGN OF PULSED POWER UHF AMPLIFIERS
|
SGS Thomson Microelectronics
|
| MAPPST2933-190M |
S BAND, Si, NPN, RF POWER TRANSISTOR HERMETICALLY SEALED PACKAGE-4
Radar Pulsed Power Pallet 190W, 2.9-3.3 GHz
|
M/A-COM Technology Solutions, Inc.
|
| 1214-700P |
700 Watts - 300楼矛s, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz
700 Watts - 300μs, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| MDS800 |
RF Power Transistors: AVIONICS
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 800; P(in) (W): 110; Gain (dB): 8.5; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technology
Microsemi, Corp.
|
| HVV0405-175-EK |
UHF Pulsed Power Transistor 400-500 MHz, 300μs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications
|
HVVi Semiconductors, Inc.
|
| PH2729-110M PH2729-11OM |
Radar Pulsed Power Transistor锛?110W
Radar Pulsed Power Transistor/ IlOW/ loops Pulse/ 10% Duty 2.7 - 2.9 GHz
Radar Pulsed Power Transistor, 110W, 100us Pulse, 10% Duty 2.7 - 2.9 GHz
|
Tyco Electronics
|
|
