PART |
Description |
Maker |
ISL9R1560G2 ISL9R1560S3S ISL9R1560P2 ISL9R1560S2 I |
15A, 600V StealthDiode 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-262 15A, 600V Stealth Diode 15A/ 600V Stealth Diode 15A, 600V Stealth⑩ Diode 15A, 600V Stealth Single Diode
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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RHRP640CC FN4464 RHRP660CC RHRP650CC |
6A, 600V Ultrafast Dual Diodes(6A, 600V 瓒?揩??????) 6A/ 400V - 600V Hyperfast Dual Diodes 6A, 600V Ultrafast Dual Diodes(6A, 600V 超快双二极管) 6A, 400V - 600V Hyperfast Dual Diodes From old datasheet system
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HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation]
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CFRM105-HF |
Halogen Free Fast Recovery Rectifiers, V-RRM=600V, V-R=600V, I-O=1A
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Comchip Technology
|
FFH50US60S |
50A, 600V StealthDiode 50 A, 600 V, SILICON, RECTIFIER DIODE, TO-247 50A, 600V Stealth⑩ Diode 50A, 600V Stealth Diode
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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IRG4BC20KS IRG4BC20K-S |
600V UltraFast 8-25 kHz Discrete IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
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IRF[International Rectifier]
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IRG4BC30U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
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IRF[International Rectifier]
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IRG4BC40W IRG4BC40W-S |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
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IRF[International Rectifier]
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STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩ Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH N-CHANNEL 3A - 600V D2PAK Power MESH IGBT N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
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ST Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
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IRG4BC20FD IRG4BC20FDPBF |
600V Fast 1-8 kHz Copack IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
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International Rectifier IRF
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IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL |
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A) Power MOSFET(Vdss=600V Rds(on)=1.2ohm Id=6.2A) CAP CER 1500PF 100V 20% X7R 0603 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)\u003d 1.2ohm,身份证\u003d 6.2A
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IRF[International Rectifier] International Rectifier, Corp.
|
FFP08S60SN FFP08S60SNTU |
8A, 600V STEALTH II Rectifier; Package: TT220; No of Pins: 2; Container: Rail 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC 8A, 600V STEALTHTM II Rectifier
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Fairchild Semiconductor, Corp.
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