| PART |
Description |
Maker |
| SBL81314X SBL81314 SBL81314RE9440 SBL81314RE9466 |
BIDI Transceiver Optical Module
From old datasheet system
BIDI TM Transceiver Optical Module 1550 nm Emitting-/1300 nm Receiving Function,Low Power
|
Infineon
|
| SBL51414X SBL51414 SBL51414RE9466 |
BIDI Transceiver Optical Module
From old datasheet system
BIDI TM Transceiver Optical Module 1300 nm Emitting/1550 nm Receiving Function,Low Power
|
Infineon
|
| SFPT-BD35-01 |
SFP BIDI DDM 155M 1310/1550nm 20KM Transceiver
|
Pulse A Technitrol Comp...
|
| SPB-9110V-T3T5G SPB-9110V-R3R5G |
1310 nm TX / 1550 nm TX / 3 Gb/s Medium Power 1-Fibre BIDI SM Dual Transmitter
|
Optoway Technology Inc
http://
|
| SBH52414XFSAN |
BIDI TM Transceiver Optical Module for ATM-PON ONU Applications,
|
Infineon
|
| SBL52414Z SBL51414G SBL51414N SBL51414Z SBL52414G |
BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving
|
http://
INFINEON[Infineon Technologies AG]
|
| SBL51414N SBL51414G SBL51414Z SBL51214Z SBL52414Z |
Low Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving
Low Power BIDI Optical Standard Module 1310 nm Emitting/ 1310 nm Receiving
|
Infineon Technologies AG
|
| SBH92344XFSAN SBH92344 |
BIDI TM Transceiver Optical Module for ATM-PON OLT Applications,
From old datasheet system
|
Infineon
|
| SBL52214Z SBL52214G SBL52214N |
Low Power BIDI Optical Standard Module 1310 nm Emitting, 1310 nm Receiving 低功率比迪光学标准模1310纳米发光，纳米接1310
|
INFINEON[Infineon Technologies AG]
|
| IRG4BC10SD-L IRG4BC10SD-S |
600V DC-1 kHz (Standard) Copack IGBT in a D2-Pak package
600V DC-1 kHz (Standard) Copack IGBT in a TO-262 package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
|
IRF[International Rectifier]
|
| IRG4BC20U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
|
IRF[International Rectifier]
|
| IRG4BC20S |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)
|
IRF[International Rectifier]
|
