| PART |
Description |
Maker |
| 1N4002G 1N4007G 1N4001G 1N4003G 1N4004G 1N4005G 1N |
400V, 1.0A glass passivated rectifier
1000V, 1.0A glass passivated rectifier
50V, 1.0A glass passivated rectifier
200V, 1.0A glass passivated rectifier
100V, 1.0A glass passivated rectifier
600V, 1.0A glass passivated rectifier
800V, 1.0A glass passivated rectifier
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http://
WTE[Won-Top Electronics]
|
| UF2A-UF2M HS2A-HS2M HS2K UF2A UF2J |
Glass Ultrafast Recovery Rectifiers
Glass High Efficiency Rectifiers
SURFACE MOUNT HIGH EFFICIENCY (ULTRA FAST) GLASS PASSIVATED RECTIFIERS
|
HY ELECTRONIC CORP.
|
| 60S05-13 |
6 Amp Axial-Lead Glass Passivated Rectifier 50 - 1000 Volts Glass Passivated Chip
|
Micro Commercial Compon...
|
| DF15005S DF1501S |
SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS SINGLE-PHASE GLASS BRIDGE
|
CHENG-YI ELECTRONIC CO., LTD.
|
| SF31G-SF38G SF38G |
SUPER FAST GLASS PASSIVATED RECTIFIERS
Glass Superfast Recovery Rectifiers
|
HY ELECTRONIC CORP.
|
| 135D306X0006C2 135D206X0010C2 135D476X0010C2 135D1 |
Wet Tantalum Capacitors, Axial, Tantalum-Case with Glass-to-Tantalum Hermetic Seal, for - 55°C to 200°C Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55?? to 200?? Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55∑C to 200∑C Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55隆?C to 200隆?C Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55掳C to 200掳C Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55°C to 200°C Operation
|
VISAY[Vishay Siliconix]
|
| ES2A-ES2J ES2B ES2A ES2D |
Glass Superfast Recovery Rectifiers
SURFACE MOUNT GLASS SUPERFAST RECOVERY RECTIFERS
|
HY ELECTRONIC CORP.
|
| 1N4944GP 1N4946GP 1N4947GPE 1N4944GPE/4G 1N4942GP |
1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
Diodes
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 600V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 400V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 200V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 1000V
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Vishay Beyschlag
|
| GP10M GP10A GP10B GP10D GP10G GP10J GP10K |
1.0 Amp Glass Passivated Junction Rectifiers 50 to 1000 Volts
Aluminum Electrolytic Radial Leaded Low Profile Wide Temp Capacitor; Capacitance: 470uF; Voltage: 16V; Case Size: 10x9 mm; Packaging: Bulk
Glass Passivated Junction Rectifiers 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
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Micro Commercial Compon...
MCC[Micro Commercial Components]
Micro Commercial Components Corp.
Micro Commercial Components, Corp.
|
| GDZJ3.0 GDZJ4.3 GDZJ2.7 GDZJ2.0 GDZJ2.2 GDZJ2.4 GD |
5.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
15 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2
16 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2
13 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2
3.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2
11 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2
12 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2
10 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2
6.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2
AXIAL LEAD ZENER DIODES
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Pan Jit International I...
Rohm Co., Ltd.
Diodes, Inc.
NXP Semiconductors N.V.
Pan Jit International Inc.
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
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MDE Semiconductor
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