| PART |
Description |
Maker |
| T1G4012036-FL-15 |
120W Peak Power, 24W Average Power, 36V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CGH40006P-AMP |
6 W, RF Power GaN HEMT
|
Cree, Inc
|
| CGH40010 |
10 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| TGA2624-CP TGA2624-CP-15 |
9 to 10 GHz, 16 W GaN Power Amplifier
|
TriQuint Semiconductor
|
| CFG40006S-AMP1 |
6 W, RF Power GaN HEMT, Plastic
|
Cree, Inc
|
| TGI0910-50 |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
| TGI8596-50 |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
| HT2121-15M |
GaN Hybrid Power Amplifier
|
RFHIC
|
| TGA2216-SM TGA2216-SM-15 |
0.1 3.0GHz 10W GaN Power Amplifier
|
TriQuint Semiconductor
|
| RF3931 |
GaN WIDE-BAND POWER AMPLIFIER
|
RF Micro Devices
|
| ECE-V1HA101UP EEV-TG2A101M ERJ-8GEYJ100V GRM32NR72 |
120W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
|
