PART |
Description |
Maker |
CSB649AC CSD669AC CSB649D |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-126 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1.5A I(C) | TO-126 TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1.5A I(C) | TO-126 晶体管|晶体管|进步党| 120伏特五(巴西)总裁| 1.5AI(丙)|126
|
Spansion, Inc.
|
2SB649AC 2SB649D 2SB649B |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-126 TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1.5A I(C) | TO-126 晶体管|晶体管|进步党| 120伏特五(巴西)总裁| 1.5AI(丙)|126
|
Glenair, Inc.
|
KSD882YSTU |
NPN Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Rail 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126
|
Fairchild Semiconductor, Corp.
|
B67385 B67385P B67385G0000X187U EPCOSAG-B67385P000 |
Ferrites and accessories UU 126/182/20, UI 126/119/20 Core set 铁氧体及配件支原26/182/20,用户界26/119/20核心
|
EPCOS AG
|
VC120605D150D VA100026D580D |
DIODE SUPPRESS SMD GR1206 UNIDIR 5.6V DIODE SUPPRESS AXIAL/BIPOL 26V MAX120A 二极管抑制轴双极26V的MAX120A
|
International Components, Corp.
|
2SD669AC 2SD669D 2SD669AB 2SD669 2SD669A |
Silicon NPN Transistor TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-126 晶体管|晶体管|叩| 160V五(巴西)总裁| 1.5AI(丙)|26 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1.5A I(C) | TO-126
|
Hitachi Semiconductor Maxim Integrated Products, Inc.
|
2SA0900S |
1 A, 18 V, PNP, Si, POWER TRANSISTOR, TO-126
|
PANASONIC CORP
|
AV882 |
TO-126 Plastic-Encapsulate Transistors
|
Electronic Theatre Controls, Inc. AVICTEK[Avic Technology]
|
2SD2136-TO126 |
TO-126 Plastic-Encapsulate Transistors
|
TY Semiconductor Co., Ltd
|
D2611 |
TO-126 Plastic-Encapsulate Transistors
|
TY Semiconductor Co., Ltd
|
BD433 |
TO-126 Plastic-Encapsulate Transistors
|
TY Semiconductor Co., L...
|