| PART |
Description |
Maker |
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| 1214GN-500 |
GaN Transistors
|
Microsemi
|
| 1214GN-600VHE |
GaN Transistors
|
Microsemi
|
| 1214GN-750V |
GaN Transistors
|
Microsemi
|
| 2730GN-100L |
GaN Transistors
|
Microsemi
|
| 2731GN-110M |
GaN Transistors
|
Microsemi
|
| GX3442 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| PDU-G105A-SM |
UV Enhanced GaN Detectors
|
Advanced Photonix
|
| GP2001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| AML618L4011 |
Gallium Nitride (GaN)
|
Microsemi
|
|
