Part Number Hot Search : 
ULN2002 TLOE53T LL415006 3A333 35N10 28F16 MBRF1045 IR9494N
Product Description
Full Text Search

IRG8P60N120KD-EPBF - 1200V UltraFast Co-Pack IGBT in a TO-247 package

IRG8P60N120KD-EPBF_8835204.PDF Datasheet


 Full text search : 1200V UltraFast Co-Pack IGBT in a TO-247 package


 Related Part Number
PART Description Maker
IRG8P40N120KD-EPBF IRG8P40N120KDPBF 1200V UltraFast Co-Pack IGBT in a TO-247 package
International Rectifier
IRG8P60N120KD-EPBF 1200V UltraFast Co-Pack IGBT in a TO-247 package
International Rectifier
IRG4PH40K 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRF[International Rectifier]
2MBI300N-120 1200V 300A 2-Pack IGBT
Fuji Electric
1MBI300S-120 1-Pack IGBT 1200V 1x300A
Fujitsu Limited
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Component Limited.
PTMB50B12C IGBT SP series Six-Pack 50A 1200V
Nihon Inter Electronics Corporation
IRG4PH40U 41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
International Rectifier, Corp.
IRF[International Rectifier]
IKB01N120H2E3045A IKP01N120H2 IGBTs & DuoPacks - 1A 1200V HighSpeed2 DuoPack IGBT D2Pak
IGBTs & DuoPacks - 1A 1200V HighSpeed2 DuoPack IGBT TO220
1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon™ diode in only one package.
Infineon
IRG4PSH71UPBF 1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package
International Rectifier
IRG4PH50UD IRG4PH50 1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A)
IRF[International Rectifier]
IRG7PH28UD1PBF 1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
International Rectifier
IRG7PH35UD1-EP 1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
International Rectifier
 
 Related keyword From Full Text Search System
IRG8P60N120KD-EPBF pitch IRG8P60N120KD-EPBF Chip IRG8P60N120KD-EPBF 技术资料下载 IRG8P60N120KD-EPBF receiver IRG8P60N120KD-EPBF china datasheet
IRG8P60N120KD-EPBF where to buy IRG8P60N120KD-EPBF varactor IRG8P60N120KD-EPBF cmos IRG8P60N120KD-EPBF prezzo baumer IRG8P60N120KD-EPBF Drain
 

 

Price & Availability of IRG8P60N120KD-EPBF

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.13969588279724