| PART |
Description |
Maker |
| PJ3100 |
7V; 300mA CMOS LDO with enable. For battery-powered devices, personal communication devices
|
PROMAX-JOHNTON
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDM075F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| TRF600-150-2 TRF600-160 TRF600-160-2 TRF600-160-R1 |
PolySwitch Resettable Devices Telecommunications & Networking Devices
|
Tyco Electronics
|
| EPC1064 EPC1064V EPC1 EPC1213 EPC1441 EP20K200C EP |
CONFIGURATION DEVICES FOR SRAM-BASED LUT DEVICES
|
Altera Corporation
ETC
|
| MICROSMD110 |
PolySwitch垄莽PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
| MINISMDC150 |
PolySwitch垄莽PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
| TS250-130F-B-0.5-2 |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| T6300415 T6300420 T6200915 T6200920 T6200930 T6300 |
TV 42C 36#22D 6#8(TWINAX) SKT 第一阶段控制晶闸管（150-300安培100-1600伏特
Phase Control SCR (150-300 Amperes 100-1600 Volts) 第一阶段控制晶闸管（150-300安培100-1600伏特
|
Micropac Industries, Inc.
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| OP07D OP07DN OP07DR-REEL OP07DR-REEL7 OP07DR OP07D |
Ultralow Offset Voltage Operational Amplifier; Package: SOIC 150 MIL; No of Pins: 8; Temperature Range: Industrial OP-AMP, 350 uV OFFSET-MAX, 0.6 MHz BAND WIDTH, PDSO8
150 μV Maximum Offset Voltage Op Amp
150 渭V Maximum Offset Voltage Op Amp
150 レV Maximum Offset Voltage Op Amp
|
Analog Devices, Inc.
|
| GAL22V10D-25LJNI LATTICESEMICONDUCTORCORP-GAL22V10 |
EE PLD, 25 ns, PQCC28 LEAD FREE, PLASTIC, LCC-28
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.
All Devices Discontinued
GAL 22V10 Device Datasheet
|
Lattice Semiconductor, Corp.
|
| SI91842DT-12-T1 SI91842DT-12-T1B SI91842DT-22-T1 S |
150-mA Low-Noise LDO Regulator With Error Flag and Discharge Option 150 - mA的低噪音LDO调节器错误国旗和放电期权
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
