| PART |
Description |
Maker |
| ISD4002-120 ISD4002-120E ISD4002-120ED ISD4002 ISD |
Single-Chip Voice Record/Playback Devices 120-, 150-, 180-, and 240-Second Durations
Single-Chip Voice Record/Playback Devices 120- 150- 180- and 240-Second Durations
|
N.A.
ETC[ETC]
|
| EPC1064 EPC1064V EPC1441 EPC1213 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDM050F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| MICROSMD035F |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| VTP170XSDF |
PolySwitch垄莽PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
| TRF250-120T-B-0.5 |
PolySwitch垄莽PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
| LVR008S |
PolySwitch垄莽PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
| TS250-130F-B-0.5-2 |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| T6300415 T6300420 T6200915 T6200920 T6200930 T6300 |
TV 42C 36#22D 6#8(TWINAX) SKT 第一阶段控制晶闸管（150-300安培100-1600伏特
Phase Control SCR (150-300 Amperes 100-1600 Volts) 第一阶段控制晶闸管（150-300安培100-1600伏特
|
Micropac Industries, Inc.
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| GAL22V10D-25LJNI LATTICESEMICONDUCTORCORP-GAL22V10 |
EE PLD, 25 ns, PQCC28 LEAD FREE, PLASTIC, LCC-28
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.
All Devices Discontinued
GAL 22V10 Device Datasheet
|
Lattice Semiconductor, Corp.
|
|
