| PART |
Description |
Maker |
| ISD4002-150ZD ISD4002-180ED |
Single-Chip Voice Record/Playback Devices 120-, 150-, 180-, and 240-Second Durations
|
etc
|
| A122012 A1221 A1222 |
The A1220, A1221, A1222, and A1223 Hall-effect sensor ICs are extremely temperature-stable and stress-resistant devices especially suited for operation over extended temperature ranges to 150°C.
|
Allegro MicroSystems
|
| EPC1064V EPC1213 EPC1441 |
Configuration Devices for ACEX/ APEX/ FLEX & Mercury Devices
|
Altera Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDM075F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| NANOSMDM050F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| A1806UC4RP P0300SCMC |
SIDACtor devices
solid state crowbar devices
|
Teccor Electronics
|
| EPC4 EPC8 |
Configuration Devices for SRAM-Based LUT Devices
|
Altera Corporation
|
| LR4-380XF LR4-600XF VTP210SL19.2_5.8 MINISMDE190F- |
PolySwitch Resettable Devices Strap Battery Devices
|
Tyco Electronics
|
| MICROSMD005F |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| TS250-130F-B-0.5-2 |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
|
