| PART |
Description |
Maker |
| ISD4002-120 ISD4002-120E ISD4002-120ED ISD4002-120 |
Single-Chip Voice Record/Playback Devices 120-, 150-, 180-, and 240-Second Durations 单芯片语音记播放设备120 - 50 - 180 -40秒持续时
Single-Chip Voice Record/Playback Device（Single-chip Durations of 120 seconds)(单片的录录音重放一片信息存储持续时120秒）) 单芯片语音记播放设备（单芯片的持续时120秒）（单片的录音/录音重放器（一片信息存储持续时120秒）
Single-Chip Voice Record/Playback Devices 120-, 150-, 180-, and 240-Second Durations 单芯片语音记播放设备120 - 150 - 180 -240秒持续时
Single-Chip Voice Record/Playback Devices 120-, 150-, 180-, and 240-Second Durations 单芯片语音记播放设备120 - 150 - 80 -40秒持续时
Single-Chip Voice Record/Playback Devices 120-, 150-, 180-, and 240-Second Durations 单芯片语音记播放设备120 - 50 - 80 -240秒持续时
Single-Chip Voice Record/Playback Devices 120-, 150-, 180-, and 240-Second Durations 单芯片语音记播放设备120 - 50 - 80 -40秒持续时
Single-Chip Voice Record/Playback Devices 120-/ 150-/ 180-/ and 240-Second Durations
|
Winbond Electronics, Corp.
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
|
| ISD4002-120 ISD4002-120E ISD4002-120ED ISD4002 ISD |
Single-Chip Voice Record/Playback Devices 120-, 150-, 180-, and 240-Second Durations
Single-Chip Voice Record/Playback Devices 120- 150- 180- and 240-Second Durations
|
N.A.
ETC[ETC]
|
| DME150-2 DME150-3 |
150 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip
|
Acrian
|
| EPC1064 EPC1064V EPC1441 EPC1213 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDC110F |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| MINISMDC110 |
PolySwitch垄莽PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
| SMD260 |
PolySwitch垄莽PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
| OP07D OP07DN OP07DR-REEL OP07DR-REEL7 OP07DR OP07D |
Ultralow Offset Voltage Operational Amplifier; Package: SOIC 150 MIL; No of Pins: 8; Temperature Range: Industrial OP-AMP, 350 uV OFFSET-MAX, 0.6 MHz BAND WIDTH, PDSO8
150 μV Maximum Offset Voltage Op Amp
150 渭V Maximum Offset Voltage Op Amp
150 レV Maximum Offset Voltage Op Amp
|
Analog Devices, Inc.
|
| MJH11020 |
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS
|
Motorola, Inc
|
|
