| PART |
Description |
Maker |
| RN4608 |
Transistor PNP Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
| 8230-90-RC 8230-94-RC 8230-78-RC 8230-76-RC 8230-5 |
Inductor; Series:8230; Inductance:820uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:3.8MHz; Core Material:Ferrite; Leaded Process Compatible:Yes 1 ELEMENT, 820 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Inductor; Series:8230; Inductance:100nH; Inductance Tolerance: /- 10 %; Q Factor:40; Self Resonant Frequency:690MHz; Core Material:Phenolic; Leaded Process Compatible:Yes 1 ELEMENT, 0.1 uH, PHENOLIC-CORE, GENERAL PURPOSE INDUCTOR
Inductor; Series:8230; Inductance:270uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:8MHz; Core Material:Ferrite; Leaded Process Compatible:Yes 1 ELEMENT, 270 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Inductor; Series:8230; Inductance:220uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:9MHz; Core Material:Ferrite; Leaded Process Compatible:Yes 1 ELEMENT, 220 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Inductor; Series:8230; Inductance:39uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:22MHz; Core Material:Ferrite; Leaded Process Compatible:Yes 1 ELEMENT, 39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Inductor; Series:8230; Inductance:15uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:35MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 15 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Inductor; Series:8230; Inductance:18uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:32MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 18 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Inductor; Series:8230; Inductance:27uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:22MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 27 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Inductor; Series:8230; Inductance:2.7uH; Inductance Tolerance: /- 10 %; Q Factor:37; Self Resonant Frequency:100MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 2.7 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR
Inductor; Series:8230; Inductance:560nH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:300MHz; Core Material:Phenolic; Leaded Process Compatible:Yes 1 ELEMENT, 0.56 uH, PHENOLIC-CORE, GENERAL PURPOSE INDUCTOR
Inductor; Series:8230; Inductance:6.8uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:60MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 6.8 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR
Inductor; Series:8230; Inductance:1.5uH; Inductance Tolerance: /- 10 %; Q Factor:28; Self Resonant Frequency:140MHz; Core Material:Iron; Leaded Process Compatible:Yes
Inductor; Series:8230; Inductance:4.7uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:75MHz; Core Material:Iron; Leaded Process Compatible:Yes
Inductor; Series:8230; Inductance:3.3uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:90MHz; Core Material:Iron; Leaded Process Compatible:Yes
|
Bourns, Inc.
BOURNS INC
|
| 3DFO 2DFO 1DFO 3DF0D27 2DF0D27 1DF0D27 3DF0T82 2DF |
128 x 128 pixel format, LED or EL Backlight available 低电容损耗角正切光盘
Low Dissipation Factor Disc Capacitors 低电容损耗角正切光盘
CAP 47UF 4V 16V TANT SMD-6032-15 TR-7
Pushbutton Switch; Leaded Process Compatible:Yes RoHS Compliant: Yes
Telephone equipment, Telephones; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| RN4610 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS.
|
Toshiba Semiconductor
|
| RN4609 |
Transistor PNP Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
|
TOSHIBA
|
| RN4602 |
Transistor PNP Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| RN4909 |
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN460407 RN4604 |
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
| 2SC2073A01 2SC2073A |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER AND VERTICAL OUTPUT APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
|
TOSHIBA[Toshiba Semiconductor]
|
| SST89C54-33-AC-NJ SST89C58-33-AC-NJ SST89C54-33-AI |
Voltage Regulator IC; Output Current:150mA; Output Voltage:3.3V; Package/Case:5-SOT-23; Supply Voltage Max:6V; Current Rating:150mA; Leaded Process Compatible:No; Output Current Max:150mA; Output Voltage Max:3.3V
Linear Voltage Regulator IC; Output Current Max:150mA; Supply Voltage Max:6V; Package/Case:5-SOT-23; Current Rating:150mA; Leaded Process Compatible:No; Output Voltage Max:5V; Peak Reflow Compatible (260 C):No
Replaced by PT78ST133 : 3.3Vout 1.5A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85
Voltage Regulator IC; Output Current:150mA; Output Voltage:2.6V; Package/Case:5-SOT-23; Supply Voltage Max:6V; Current Rating:150mA; Leaded Process Compatible:No; Output Current Max:150mA; Output Voltage Max:2.6V
Linear Voltage Regulator IC; Package/Case:5-SOT-23; Current Rating:150mA; Leaded Process Compatible:No; Output Voltage Max:5V; Peak Reflow Compatible (260 C):No; Reel Quantity:3000; Voltage Regulator Type:Low Dropout (LDO) RoHS Compliant: No
Linear Voltage Regulator IC; Output Current Max:150mA; Supply Voltage Max:6V; Package/Case:5-SOT-23; Current Rating:150mA; Leaded Process Compatible:No; Output Voltage Max:2.85V; Peak Reflow Compatible (260 C):No
Linear Voltage Regulator IC; Output Current Max:150mA; Supply Voltage Max:6V; Package/Case:5-SOT-23; Current Rating:150mA; Leaded Process Compatible:No; Output Voltage Max:3V; Peak Reflow Compatible (260 C):No
Linear Voltage Regulator IC; Output Current Max:150mA; Supply Voltage Max:6V; Package/Case:5-SOT-23; Current Rating:150mA; Leaded Process Compatible:No; Output Voltage Max:1.8V; Peak Reflow Compatible (260 C):No
Voltage Regulator IC; Output Current:500mA; Output Voltage:1.215V; Package/Case:8-MLP33; Supply Voltage Max:6V; Current Rating:500mA; Leaded Process Compatible:No; Output Current Max:500mA; Output Voltage Max:1.215V
FlashFlex51 MCU FlashFlex51单片
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| RN1965 RN1964 RN1961 RN1962 RN1963 RN1966 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 东芝npn型晶体管硅外延型（厘进程
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
