| PART |
Description |
Maker |
| IRHG563110 IRHG567110 IRHG563110P IRHG567110P IRHG |
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 300kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET THRU-HOLE 100V, Combination 2N-2P-CHANNEL
|
IRF[International Rectifier]
|
| IRFG5110 IRFG5110P IRFG5110N IRFG5110-15 |
Simple Drive Requirements
100V, Combination 2N-2P-CHANNEL
-100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
| IRHQ63110 IRHQ6110 IRHQ6110N IRHQ63110N |
100V Dual 2N- and 2P- Channel MOSFET in a 28-pin LCC package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a 28-pin LCC package
100V 300kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a 28-pin LCC package
|
IRF[International Rectifier]
|
| FDC8602 |
Dual N-Channel PowerTrench? MOSFET 100 V, 1.2 A, 350 mΩ
100V Dual N-Channel PowerTrenchMOSFET
|
Fairchild Semiconductor
|
| FDS3672 FDS3672NL |
N-Channel PowerTrench MOSFET 100V/ 7.5A/ 22m
N-Channel PowerTrench MOSFET 100V, 7.5A, 22mз
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 7.5A, 0.022 Ohm @ Vgs = 10V, SO-8 Package
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQP90N10V2 FQPF90N10V2 |
100V N-Channel Advanced QFET V2 series
100V N-Channel MOSFET 90 A, 100 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRF5Y3710CM |
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.035ohm, Id=18A*) 功率MOSFET N沟道（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.035ohm，身份证\u003d 18A
POWER MOSFET N-CHANNEL(Vdss=100V Rds(on)=0.035ohm Id=18A*)
THRU-HOLE (TO-257AA) 100V, N-CHANNEL
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFG6110 JANTXV2N7336 JANTX2N7336 IRFG6110N |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
POWER MOSFET THRU-HOLE (MO-036AB)
|
IRF[International Rectifier]
|
| KDS3912 |
100V Dual N-Channel PowerTrench MOSFET
|
Guangdong Kexin Industrial Co.,Ltd
|
| IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package
34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A)
Avalanche Energy Ratings
|
IRF[International Rectifier]
|
| FX6ASH3 FX6ASH2 FX6UMH3 FX6VSH3 FX6SMH3 FX6KMH2 FX |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 100V的五（巴西）直| 20A条（丁）|52AA
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 150伏五（巴西）直| 3A条（丁）| TO - 220AB现有
|
Cooper Bussmann, Inc.
|
