| PART |
Description |
Maker |
| APT50GT120B2RDQ2G |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: T-MAX™ [B2]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 50; 94 A, 1200 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
| CM600DU-24F |
Dual IGBTMOD 600 Amperes/1200 Volts 600 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| STTH1212G-TR STTH1212 STTH1212D STTH1212G |
12 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AC
Ultrafast recovery - 1200 V diode
|
STMicroelectronics
|
| APT11GF120BRDQ1 APT11GF120BRDQ1G |
FAST IGBT & FRED
Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 11; 25 A, 1200 V, N-CHANNEL IGBT, TO-247AC
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| D390CH18E3L2 D390CH18E3L3 D390CH18E3L4 D390CH18E3L |
2426 A, 1800 V, SCR
1125 A, 1200 V, SCR, TO-200AB
1950 A, 800 V, SCR, TO-200AC
5087 A, 1600 V, SCR
5087 A, 1800 V, SCR
2749 A, 1800 V, SCR
2749 A, 800 V, SCR
2110 A, 3000 V, SCR
2749 A, 600 V, SCR
1895 A, 1000 V, SCR, TO-200AC
2268 A, 1200 V, SCR
5260 A, 1200 V, SCR
1690 A, 800 V, SCR, TO-200AC
2749 A, 1600 V, SCR
5260 A, 1600 V, SCR
2749 A, 1000 V, SCR
1765 A, 1200 V, SCR, TO-200AC
1765 A, 1600 V, SCR, TO-200AC
2749 A, 1200 V, SCR
2749 A, 400 V, SCR
1030 A, 800 V, SCR, TO-200AB
1715 A, 600 V, SCR, TO-200AC
3140 A, 600 V, SCR
2600 A, 1200 V, SCR
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| CM1200HA-24J |
Single IGBTMOD?H-Series Module 1200 Amperes/1200 Volts
Single IGBTMOD H-Series Module 1200 Amperes/1200 Volts
Single IGBTMOD⑩ H-Series Module 1200 Amperes/1200 Volts
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
| C-CWP347-18 T-CWP347-12 T-CWP347-18 W-CWP347-18 C- |
392.5 A, 1800 V, SCR
392.5 A, 1200 V, SCR
47.1 A, 1200 V, SCR
37.68 A, 1200 V, SCR
81.64 A, 800 V, SCR
81.64 A, 1200 V, SCR
|
IXYS, Corp.
IXYS CORP
|
| MGY25N120_D ON1934 MGY25N120 |
Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264
IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| APT26F120L APT26F120B2 APT26F120B209 |
Power FREDFET; Package: TO-264 [L]; ID (A): 27; RDS(on) (Ohms): 0.58; BVDSS (V): 1200; 27 A, 1200 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power FREDFET; Package: T-MAX™; ID (A): 27; RDS(on) (Ohms): 0.58; BVDSS (V): 1200; 27 A, 1200 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel FREDFET
|
Microsemi, Corp.
Microsemi Corporation
|
| KS621240 |
Single Darlington Transistor Module 400 Amperes/1200 Volts 400 A, 1200 V, NPN, Si, POWER TRANSISTOR
|
Powerex, Inc.
Powerex Power Semiconductors
|
| CM75DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| APT2X31DQ120J APT2X30DQ120J |
Fast Recovery Epitaxial Diode; Package: ISOTOP®; IO (A): 30; VR (V): 1200; trr (nsec): 25; VF (V): 2.6; Qrr (nC): 1800; 30 A, 1200 V, SILICON, RECTIFIER DIODE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
|
