| PART |
Description |
Maker |
| MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06 |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
http://
|
| MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D |
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTB4N80E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| RJK0391DPA RJK0391DPA-00-J5A RJK0391DPA-13 RJK0391 |
N Channel Power MOS FET High Speed Power Switching
30V, 50A, 2.9m?max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| SFT815 |
HIGH ENERGY FAST SWITCHING NPN POWER TRANSISTOR 90 AMPS 300 V 90 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3
|
Solid State Devices, Inc.
|
| CS54610408 CS5461 |
Single-Phase, Bidirectional Power/Energy IC
Single Phase Bi-Directional Power/Energy IC
|
Cirrus Logic
|
| CBC-EVAL-09 |
EnerChip Energy Processor for Energy Harvesting Applications
|
Cymbet Corporation
|
| FLL200IB-3 FLL200IB-2 FLL200IB-1 |
L-Band Medium & High Power GaAs FET
L-Band Medium & High Power GaAs FET L波段中等
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Sumitomo Electric Industries, Ltd.
|
| ET250 ET70 ET150 |
Metal Composite Tubular type Non-Inductive Resistors for Ultra High Voltage, High Energy
|
Willow Technologies Limited
|
