| PART |
Description |
Maker |
| IRFN140SMD |
ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）3.9A，的Rds（on）：0.077Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本100V的，身份证（续）3.9A时，RDS（对）：0.077Ω））
|
TT electronics Semelab, Ltd.
International Rectifier, Corp.
Seme LAB
|
| IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）.8A时，RDS（上）：0.46Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）.8A时，RDS（对）：0.46Ω））
N-Channel N沟道
|
NXP Semiconductors N.V.
TT electronics Semelab Limited
Seme LAB
|
| SML100W18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| B1821BH075C300N B1821BH075C275N B1821BH038C275N B1 |
Cap Screws Cont
|
Fastenal
|
| SML80A12 SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| SML50W40 |
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):40A,Rds(on):0.12惟)(N娌??澧?己??楂???????OS?烘?搴??(Vdss:500V,Id(cont):40A,Rds(on):0.12惟))
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
SEME-LAB[Seme LAB]
SemeLAB
|
| APT50M60JVR |
Volts:500V RDS(ON)0.06Ohms ID(cont):63Amps|MOSFETs 电压00V电压的RDS（ON.06Ohms身份证（续）63安培| MOSFET
|
Yageo, Corp.
|
| AT45DB1282NBSP AT45DB1282 |
128M bit, 2.7-Volt Only Dual-Interface Flash. This document is only available under NDA. Please cont
From old datasheet system
|
Atmel Corp
|
| 2N5484 2N5485 2N5486 SST5484 SST5485 SST5486 |
High Frequency/General Purpose
N-Channel JFETs
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:-20A; Power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:5.6A; Current, Idm pulse:-30A; Power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p
|
Vishay Siliconix
Vishay Intertechnology,Inc.
|
| APC08Y08-J APC08G08-J APC08F08-J APC08K08-J APC08M |
PWR CORD,3C,Y,TWIN END,4', 18AWG,
HEADER,RT/ANGLE,MALE,2RW,80PIN .1"CTR,.025"PST,.23"GOLD TAIL
HEADER,RT MALE,2RW,50 CONT, .1"CTR,.025"PST,.23"GOLD TAIL
CONN,HEADER,STRAIGHT,20 PIN
HEADER,VERTICAL,REC,2RW,30cont
HEADER,ST MALE,2RW,10PIN, .1"CTR,.025"PST,.23"GOLD (10)
HEADER,.1"ST MALE,2RW,14PIN, .025" PST,.23" GOLDTAIL
HEADER,RT MALE,2RW,26 CONT, .1"CTR,.025"PST,.23"GOLD TAIL
HEADER,RT MALE,2RW,72PIN, .1"CTR,.025"PST,.23"GOLD TAIL
CONNECTOR,HEADER,STRAIGHT, 50PIN
HEADER,LP SHROUD,20PIN,STRGHT.
HEADER,ST MALE,2RW,80 PIN, .1"CTR,.025"PST,.23"GOLD TAIL
HEADER,LP SHROUD,10PIN,STRGHT.
CONN,HEADER,26 PIN,W/LATCHES, .100",MALE,STRAIGHT,DUAL ROW
HEADER,ST MALE,2RW,50PIN, .1"CTR,.025"PST,.23"GOLD TAIL
HEADER,VERTICAL,REC,1RW,8cont
CONNECTOR,HEADER,STRAIGHT, 10PIN
PWR CORD,3C,9'10",BLACK,910PLG UNSHIELDED,18AWG,SJT,PIGTAIL
HEADER,RT MALE,2RW,20 CONT, .1"CTR,.025"PST,.23"GOLD TAIL
HEADER,ST MALE,2RW,6PIN, .1"CTR,.025 PST,.23"GLDTL (10) 非隔离DC / DC电源模块
HEADER,.1"ST MALE,2RW,14PIN, .025" PST,.23" GOLDTAIL 非隔离DC / DC电源模块
HEADER,ST MALE,2RW,60PIN, .1"CTR,.025"PST,.23"GOLD TAIL 非隔离DC / DC电源模块
HEADER,.1"ST MALE,2RW,8PIN, .025"PST,.23"GOLDTAIL (10) 非隔离DC / DC电源模块
|
Astec America, Inc
Alliance Semiconductor, Corp.
JST Mfg. Co., Ltd.
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