| PART |
Description |
Maker |
| STP16NE06 STP16NE06FP 5315 P16NE |
11 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel 60V-0.08Ω-16A- TO-220/TO-220FP STripFETTM Power MOSFET(N沟道功率MOSFET) N沟道60V0.08Ω- 16A条，TO-220/TO-220FP STripFETTM功率MOSFET（不适用沟道功率MOSFET的）
N-CHANNEL Power MOSFET
From old datasheet system
N - CHANNEL 60V - 0.08 - 16A - TO-220/TO-220FP STripFET? POWER MOSFET
N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IRHLF7970Z4 IRHLF7930Z4 IRHLF6970Z4 IRHLF6930Z4 |
60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-39 package
60V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-39 package
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39)
|
IRF[International Rectifier]
|
| IRFP064V |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=60V, Rds(on)=5.5mohm, Id=130A?
|
Power MOSFET
International Rectifier
|
| IRFL014 IRFL014TR |
60V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=2.7A)
|
International Rectifier
|
| IRFP054V |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=60V, Rds(on)=9.0mohm, Id=93A?
|
Power MOSFET
International Rectifier
|
| IRFZ44EL IRFZ44ES IRFZ44ESTRL IRFZ44ESTRR |
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier
|
| IRHNJ59303 IRHNJ59703 IRHNJ597034 IRHNJ593034 |
-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package
-60V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT
|
IRF[International Rectifier]
|
| CFD2374 CFD2374Q CFB1548 CFB1548A CFB1548AP CFB154 |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548Q
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374A
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374AP
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFD2374AQ
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374P
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548A
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548P
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548AQ
|
Continental Device India Limited
|
| IRFV064 |
60V Single N-Channel Hi-Rel MOSFET in a TO-258AA package
HEXFET TRANSISTOR, N-CHANNEL
|
International Rectifier
|
| CSB1370 CSB1370F CSB1370D CSB1370E |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE.
PNP Silicon Epitaxial Power Transistor
|
CDIL[Continental Device India Limited]
|
| IRHNA593064 IRHNA597064 |
-60V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package
-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package
|
International Rectifier
|
| IRHY597034CM IRHY593034CM |
-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package
-60V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package
|
International Rectifier
|
