PART |
Description |
Maker |
HM5164165F HM5165165F HM5165165FJ-5 HM5165165FJ-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
|
HITACHI[Hitachi Semiconductor]
|
W971GG6JB W971GG6JB25I |
8M ?8 BANKS ?16 BIT DDR2 SDRAM DLL aligns DQ and DQS transitions with clock, Auto Refresh and Self Refresh modes, Write Data Mask
|
Winbond
|
HM5164165FTT-5 HM5165165FTT-5 HM5164165FTT-6 HM516 |
64M EDO DRAM (4-Mword × 16-bit) 8k refresh/4k refresh 64M EDO DRAM (4-Mword 隆驴 16-bit) 8k refresh/4k refresh
|
Elpida Memory
|
HM5112805FLTD-6 HM5113805FLTD-6 |
128M EDO DRAM (16-Mword × 8-bit) 8k refresh/4k refresh 128M EDO DRAM (16-Mword 隆驴 8-bit) 8k refresh/4k refresh
|
Elpida Memory
|
HM51W16405TS-5 HM51W16405TS-6 HM51W16405TS-7 HM51W |
16 M EDO DRAM (4-Mword ′ 4-bit) 4 k Refresh/2 k Refresh 16 M EDO DRAM (4-Mword 垄楼 4-bit) 4 k Refresh/2 k Refresh
|
Elpida Memory
|
S43R32800-6BL |
Auto refresh and Self refresh
|
Integrated Silicon Solu...
|
IS43R16160-6TL |
Auto refresh and Self refresh
|
Integrated Silicon Solu...
|
HM51W16165 HM51W16165J-5 HM51W16165J-6 HM51W16165J |
1M X 16 EDO DRAM, 60 ns, PDSO44 16 M EDO DRAM (1-Mword x 16-bit) 4 k Refresh/1 k Refresh
|
ELPIDA MEMORY INC
|
HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HY |
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24 High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24 4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO)) 4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO)) 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS AG http:// Siemens Semiconductor Group
|
KMM372F3200BK3 KMM372F3280BK3 KMM372F400CK KMM372F |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
|
Samsung Electronic Samsung semiconductor
|
KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL- |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
|
Samsung Electronic
|
AM8150 |
Display Refresh Controller
|
AMD
|