| PART |
Description |
Maker |
| KMM5361203C2W |
1MBx36 DRAM Simm Using 1MBx16 And 1MBx4 Quad Cas
|
Samsung Semiconductor
|
| KMM5368003BSWG KMM5368003BSW |
8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KM44C4005C |
4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out
|
Samsung semiconductor
|
| KMM5364005CSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM5364003CSW KMM5364003CSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
| KMM5362203C2W |
2Mx36 DRAM Simm Using 1Mx16 And 1Mx4 Quad Cas
|
Samsung Semiconductor
|
| KMM5361205C2W |
1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo
|
Samsung Semiconductor
|
| KMM5364005CKG KMM5364105CKG KMM5364105CK KMM536400 |
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V 4米36的DRAM上海药物研究所利用4Mx46M四中科院K/2K，刷新，5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
|
| KMM5364003CSW KMM5364003CSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EM47FM0888SBA-15 EM47FM0888SBA--125A EM47FM0888SBA |
Double DATA RATE 3 low voltage SDRAM
Posted CAS by programmable additive latency
|
Eorex Corporation
|
| CKSR-25-NP CKSR-15-NP CKSR-50-NP |
CAS / CASR / CKSR series Current Transducers
|
LEM
|
