| K4M56163PE-RG K4M56163PE-R K4M56163PE-F90 K4M56163 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, CSP-54
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, CSP-54
|
Samsung Semiconductor Co., Ltd.
Omron Electronics, LLC
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| AT28HC256F-12UM_883 AT28HC256F-90FM_883 AT28HC256E |
256 (32K x 8) High-speed Parallel EEPROM
32K X 8 EEPROM 5V, 90 ns, PQCC32 PLASTIC, MS-016AE, LCC-32
70NS, TSOP, IND TEMP(EEPROM) 32K X 8 EEPROM 5V, 70 ns, PDSO28
70NS, PLCC, IND TEMP, GREEN PKG(EEPROM) 32K X 8 EEPROM 5V, 70 ns, PQCC32
90NS, PDIP, IND TEMP, GREEN(EEPROM) 32K X 8 EEPROM 5V, 90 ns, PDIP28
120NS, SOIC, IND TEMP, GREEN(EEPROM) 32K X 8 EEPROM 5V, 120 ns, PDSO28
|
ATMEL Corporation
Atmel, Corp.
ATM Electronic, Corp.
|
