PART |
Description |
Maker |
IPT012N06N |
OptiMOSTM Power-Transistor, 60 V
|
Infineon Technologies A...
|
BSZ160N10N3SG |
OptiMOSTM 3 Power-Transistor
|
Infineon Technologies AG
|
IPD033N06N |
OptiMOSTM Power-Transistor, 60 V
|
Infineon Technologies A...
|
BSZ028N04LS |
OptiMOSTM Power-MOSFET, 40 V
|
Infineon Technologies A...
|
BSZ040N06LS5 |
OptiMOSTM Power-Transistor, 60 V
|
Infineon Technologies A...
|
IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞???? HEXFET Power MOSFET HEXFET? Power MOSFET 11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier] VISHAY SILICONIX
|
VUM33-05N VUM33-05 IXYSCORP-VUM33-05N |
Power MOSFET Stage for Boost Converters 47 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system Power Factor Correction Modules: MOSFET
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IRFR6215PBF IRFU6215PBF IRFR6215TR IRFR6215TRL IRF |
Advanced Process Technology HEXFET㈢ Power MOSFET HEXFET? Power MOSFET 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA 175°C Operating Temperature
|
International Rectifier
|
IRF1404SPBF IRF1404LPBF IRF1404STRLPBF IRF1404SPBF |
HEXFET垄莽 Power MOSFET HEXFET? Power MOSFET 75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA Advanced Process Technology
|
International Rectifier
|
IRFZ44VL IRFZ44VS IRFZ44VSTRR |
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A) (IRFZ44VL / IRFZ44VS) Power MOSFET
|
IRF[International Rectifier]
|
IRLS3034PBF IRLSL3034PBF IRLS3034TRLPBF IRLS3034PB |
HEXFET Power MOSFET 195 A, 40 V, 0.0017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA HEXFETPower MOSFET High Efficiency Synchronous Rectification in SMPS
|
International Rectifier
|