| PART |
Description |
Maker |
| 1072143 |
RADAR SENSORS
|
SICK AG
|
| HVV1214-025 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| QT300-D QT300-IS |
0.5-6.0V; 40mA; capacitance to digital converter. For fluid level sensors, prox sensors, moisture detection, position sensing, transducer driver and material sensors
|
Quantum Research Group ltd
|
| PH1214-25S |
1200-1400 MHz,25 W, 1 ms pulse,radar pulsed power transistor
Radar Pulsed Power Transistor, 25W, lus Pulse, 10% Duty 1.2-1.4 GHz
|
MA-Com
M/A-COM / Tyco Electronics
|
| PHL2143 PH1214-3L |
Radar Pulsed Power Transistor3W
Radar Pulsed Power Transistor/ 3W/ 2ms Pulse/ 20% Duty 1.2 - 1.4 GHz
Radar Pulsed Power Transistor, 3W, 2ms Pulse, 20% Duty 1.2 - 1.4 GHz 雷达脉冲功率晶体管的3W毫秒脉冲0％的责任1日至1号吉
|
Tyco Electronics
Velleman, Inc.
|
| PHI214-30EL PH1214-30EL |
Radar Pulsed Power Transistor, 30W, 1.0ms Pulse, 10% Duty 1.2 - 1.4 GHz
High Speed Comparator; Package: PDIP; No of Pins: 16; Temperature Range: 0°C to 70°C
Radar Pulsed Power Transistor, 3OW, 1 .Oms Pulse, 10% Duty . 1.2 - 1.4 GHz
Radar Pulsed Power Transistor/ 3OW/ 1 .Oms Pulse/ 10% Duty . 1.2 - 1.4 GHz
|
Tyco Electronics
|
| BLL1214-35 BLL1214-35_1 |
L-band radar LDMOS transistor
L-band radar LDMOS driver transistor
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| AM83135-040 2772 |
Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:16 x 30; Jacket Color:Red; Approval Bodies:UL, CSA; Approval Categories:UL AWM Styles 1007, 1565; CSA Types TR-64, TRSR-64; JQA-F; Passes VW-1 Flame Test RoHS Compliant: Yes 射频
From old datasheet system
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| PH3134-9L PTI3134-9L |
Radar Pulsed Power Transistor/ SW/ 300ms Pulse/ 10% Duty 3.1 - 3.4 GHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.1A I(C)
Radar Pulsed Power Transistor, 9W, 300us Pulse, 10% Duty 3.1 - 3.4 GHz
|
Tyco Electronics
|
| AM83135-005 2897 |
Hook-Up Wire; Conductor Size AWG:20; No. Strands x Strand Size:10 x 30; Jacket Color:Yellow; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 1061, CSA Type AWM; Conductor Material:Copper; Conductor Plating:Tin RoHS Compliant: Yes
From old datasheet system
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| PHI214-6M PH1214-6M |
Radar Pulsed Power Transistor/ SW/ looms Pulse/ 10% Duty 1.2 - 1.4 GHz
Radar Pulsed Power Transistor, SW, looms Pulse, 10% Duty 1.2 - 1.4 GHz
RADAR PULSED POWER TRANSISTOR, 6W, 100us PULSE, 10% DUTY
|
Tyco Electronics
Electronic Theatre Controls, Inc.
|
| EGF1NCDCDE050 EGF1NOLAT3 EGF1NOACDE050 EGF1NCACDE0 |
CurrentWatch Current Sensors EGF Series Ground Fault Sensors
|
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