| PART |
Description |
Maker |
| STB11NM60FD STB11NM60FD-1 STB11NM60FDT4 STP11NM60F |
11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
N-CHANNEL 600V - 0.40ohm - 11A TO-220 / TO-220FP/I2PAK FDmeshPower MOSFET with FAST DIODE N沟道600V 0.40ohm - 11A 220 / TO-220FP/I2PAK FDmesh？功率MOSFET，快速二极管
N-CHANNEL 600V - 0.40 OHM - 11A TO-220/TO-220FP/I2PAK/D2PAK FDMESH MOSFET (WITH FAST DIODE)
|
STMicroelectronics N.V.
ST Microelectronics
|
| AOB11N60L |
600V,11A N-Channel MOSFET
|
Alpha & Omega Semiconductors
Alpha & Omega Semiconductor...
|
| STB11NM60T4 |
N-Channel 600V - 0.4Ohm - 11A TO-220 MDmesh™ POWER MOSFET
|
ST Microelectronics
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| IRFPC50 C50IRF |
Power MOSFET(Vdss=600V / Rds(on)=0.60ohm / Id=11A)
Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A)
|
IRF[International Rectifier]
|
| RJK6013DPE RJK6013DPE-00J3 RJK6013DPE12 RJK6013DPE |
600V - 11A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| IRG4BC20MD |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
|
IRF[International Rectifier]
|
| HGT1S12N60A4S HGTG12N60A4 HGTP12N60A4 FN4656 HGT1S |
600V, SMPS Series N-Channel IGBT
From old datasheet system
600V/ SMPS Series N-Channel IGBT
600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-263AB
600V, SMPS Series N-Channel IGBT 54 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
Fairchild Semiconductor, Corp.
|
| BCM94328 |
AirForce One SINGLE-CHIP IEEE 802.11a/b/g MAC/BASEBAND/RADIO WITH INTEGRATED CPU 空军一个单片IEEE 802.11a/b/g无线MAC /基频/收音机集成CPU
|
Broadcom, Corp.
|
