| PART |
Description |
Maker |
| ECA-2AM100 ECJ-2VB1H103K 1812SMS-68NJLB ERJ-8GEYJ1 |
280W GaN Wideband Pulsed Power Amplifier
|
RF Micro Devices
|
| RFHA1023 |
225W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
| RFHA1021U |
60W GaN Wide-Band Pulsed Power Amplifier
|
RF Micro Devices
|
| MAGX-002731-180L00 MAGX-002731-SB3PPR |
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| NPT2020 NPT2020-SMB2 NPT2020-15 |
GaN Wideband Transistor 48 V, 50 W
|
M/A-COM Technology Solu...
|
| NPT2022 NPT2022-14 |
GaN Wideband Transistor 48 V, 100 W
|
M/A-COM Technology Solu...
|
| MRF6V2010N |
Designed primarily for pulsed wideband large - signal output and driver
|
Motorola Semiconductor Products
|
| PH1214-20EL |
Radar Pulsed Power Transistor, 20W, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz
Radar Pulsed Poewr Transistor20W 雷达脉冲Poewr晶体管，20
|
Tyco Electronics
Rhopoint Components, Ltd.
|
| ITC1100 |
1000 WATT, 50V, Pulsed Avionics 1030 MHz
Common base bipolar transistor 1000 WATT, 50V, Pulsed
|
List of Unclassifed Manufacturers
ETC
GHz Technology
|
| TCS450 |
450 Watts, 45 Volts, Pulsed Avionics 1030 MHz
TCAS 1030 MHz, Class C, Common Base, Pulsed; P(out) (W): 450; P(in) (W): 100; Gain (dB): 6.5; Vcc (V): 45; Pulse Width (µsec): 32; Duty Cycle (%): 2; Case Style: 55KT-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
MICROSEMI POWER PRODUCTS GROUP
GHz Technology
Microsemi, Corp.
|
| MDS150 |
150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 150; P(in) (W): 20; Gain (dB): 10; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55AW-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi Corporation
Microsemi, Corp.
|
