| PART |
Description |
Maker |
| Q68000-A4444 CGY40 |
From old datasheet system
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Application range: 100 MHz to 3 GHz)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| Q68000-A8787 CGY62 |
GaAs MMIC (Two-stage microwave broadband amplifier IC 50 input / output) 200 MHz - 1800 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
GaAs MMIC (Two-stage microwave broadband amplifier IC 50 input / output)
From old datasheet system
GaAs MMIC (Two-stage microwave broadband amplifier IC 50 ヘ input / output)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| TG2006F |
GaAs Linear Integrated Circuit GaAs Monolithic 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication
|
TOSHIBA
|
| GC9903 GC9914 GC9944 GC9942 GC9901 GC9921 GC9923 |
Microwave Monolithic Schottky
|
Microsemi
|
| S8837A |
MICROWAVE POWER GaAs FET
|
TOSHIBA[Toshiba Semiconductor]
|
| TIM4450-4U |
MICROWAVE POWER GaAs FET
|
TOSHIBA
|
| TIM5964-8 |
MICROWAVE POWER GAAS FET
|
TOSHIBA[Toshiba Semiconductor]
|
| TIM7785-6UL |
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
|
| TIM5359-4UL |
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
|
| TIM7785-8UL |
MICROWAVE POWER GaAs FET
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
