| PART |
Description |
Maker |
| MCP2510-/P MCP2510-/SO MCP2510-/ST MCP2510T-/SO MC |
Stand-Alone CAN Controller with SPIInterface
Stand-Alone CAN Controller with SPI Interface
Stand-Alone CAN Controller with SPI?/a> Interface
1 CHANNEL(S), 1M bps, LOCAL AREA NETWORK CONTROLLER, PDSO18 0.300 INCH, PLASTIC, SOIC-18
1 CHANNEL(S), 1M bps, LOCAL AREA NETWORK CONTROLLER, PDSO20
|
Microchip Technology Inc.
Microchip Technology, Inc.
|
| ENC424J600 ENC624J600 |
Stand-Alone 10/100 Ethernet Controller with SPI or Parallel Interface
|
Microchip Technology
|
| AN0110NA |
100 V, 100 om, N-channel enhancement-mode D-MOS FET 8-channel array
|
Topaz Semiconductor
|
| FSF2510 FSF2210 FSN1410 FSN1606 IRF540 |
N Channel MOSFET; Package: TO-254; trr (nsec): 600; t(on) (nsec): 100; ID (A): 25; RDS(on) (Ohms): 0.07; PD (W): 125; BVDSS (V): 100; Rq: 1; VSD (V): 2.3 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-254; trr (nsec): 300; t(on) (nsec): 23; ID (A): 22; RDS(on) (Ohms): 0.1; PD (W): 100; BVDSS (V): 100; Rq: 1.3; VSD (V): 2.5 22 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 250; t(on) (nsec): 14; ID (A): 14; RDS(on) (Ohms): 0.18; PD (W): 50; BVDSS (V): 100; Rq: 2; VSD (V): 2.5 14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 220; t(on) (nsec): 21; ID (A): 16; RDS(on) (Ohms): 0.07; PD (W): 50; BVDSS (V): 60; Rq: 2; VSD (V): 1.8 16 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
STMicroelectronics N.V.
MICROSEMI CORP
|
| PSMN039-100YS |
N-channel LFPAK 100 V 39.5 m惟 standard level MOSFET
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET
N-channel LFPAK 100 V 39.5 m standard level MOSFET 28.1 A, 100 V, 0.0395 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
|
NXP Semiconductors N.V.
|
| PSMN034-100PS |
N-channel 100 V 34.5 m惟 standard level MOSFET in TO220.
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
N-channel 100 V 34.5 m standard level MOSFET in TO220. 32 A, 100 V, 0.0345 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
| PPF75N10N |
N Channel MOSFET; Package: TO-258; ID (A): 50; RDS(on) (Ohms): 0.025; PD (W): 300; BVDSS (V): 100; Rq: 0.42; 50 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
|
Microsemi, Corp.
|
| P6KE200C P6KE9.1 P6KE9.1C P6KE47C P6KE51C P6KE30 P |
600W TRANSIENT VOLTAGE SUPPRESSORS
Reverse stand-off voltage: 128.00V, 600W transient voltage suppressor
Reverse stand-off voltage: 138.00V, 600W transient voltage suppressor
Low Power 5V RS232 Dual Driver/Receiver with 0.1?μF Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?°C to 85?°C 电可擦除可编程逻辑器件
600W TRANSIENT VOLTAGE SUPPRESSORS 600W瞬态电压抑制器
Single Output LDO, 200mA, Fixed(2.5V), Low Quiescent Current, Low Noise, High PSRR 5-SOT -40 to 85
2.5-V 460-Kbps RS-232 Transceiver With /-15-kV ESD Protection 20-TSSOP -40 to 85
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 6.8 TO 440 Volts 600Watt Peak Power 5.0 Watt Steady State)
Reverse stand-off voltage: 171.00V, 600W transient voltage suppressor
|
Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
Panjit International Inc
Microsemi
|
| 30KPA90CA OKPA170CA OKPA180CA OKPA198CA OKPA216CA |
STAND-OFF VOLTAGE-30 TO 288 Volts 30000 Watt Peak Pulse Power
Diode TVS Single Bi-Dir 180V 30KW 2-Pin Case P600 T/R
STAND-OFF VOLTAGE-30 TO 288 Volts 30000 Watt Peak Pulse Power
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
New Jersey Semiconductors
|
| SUM34N10-35 |
N-Channel 100-V (D-S) 175C MOSFET
N-Channel 100-V (D-S) 175C MOSFET
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| SUD40N10-25 |
N-Channel 100-V (D-S) 175C MOSFET
N-Channel 100-V (D-S) 175`C MOSFET
|
VISAY[Vishay Siliconix]
|
| NTB6410ANT4G NTP6410AN NTP6410ANG NTB6410ANG |
N-Channel Power MOSFET 100 V, 76 A, 13 mΩ
76 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
ON Semiconductor
|
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