| PART |
Description |
Maker |
| 2SD1953 0771 |
NPN Epitaxial Planar Silicon Transistor 120V/1.5A Driver Applications
From old datasheet system
NPN Epitaxial Planar Silicon Transistors for 120V/1.5A Driver Applications(120V/1.5A驱动器应用的NPN硅外延平面型晶体
|
Sanyo Electric Co.,Ltd.
|
| 2SB631 2SB631K 2SD600 2SD600K |
NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amp Applications
PNP/NPN Epitaxial Planar Silicon Transistors
100V/120V, 1A Low-Frequency Power Amp Applications
PNP Epitaxial Planar Silicon Transistor for 100V/120V, 1A Low-Frequency Power Amplifier Applications(用于100V/120VA低频功率放大器应用的PNP硅外延平面型晶体
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| ECG105 ECG85 ECG91 ECG90 ECG92 ECG101 |
Pressure (Pa): 770 ( 3.09inchH2O / 75.1 ( 0.30inchH2O ); Noise (dB[A]): 71 / 40; Mass (g): 760;
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 400MA I(C) | TO-92
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | SIP 晶体管|晶体管| npn型| 200伏五（巴西）总裁| 15A条（c）的|园区
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-5 晶体管|晶体管|叩| 20V的五（巴西）总裁| 300mA的一（c）|
|
NXP Semiconductors N.V.
|
| 2SD668 2SD668AC 2SD668D 2SD668AB |
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 50MA I(C) | TO-126 晶体管|晶体管|叩| 160V五（巴西）总裁| 50mA的一c）|26
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-126 晶体管|晶体管| npn型| 120伏特五（巴西）总裁| 50mA的一（c）|26
Silicon NPN Epitaxial Transistor
|
Vishay Intertechnology, Inc.
Renesas Technology / Hitachi Semiconductor
|
| OP955 |
PIN Sili con Pho todiode
|
Optek Technology
ETC
OPTEK[OPTEK Technologies]
|
| WT4321 WT4424 WT4415 WT4416 WT4425 WT4432 WT4433 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 325A I(C) | FBASE-F
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 325A I(C) | STR-3/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 275A I(C) | STR-3/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 275A I(C) | STR-3/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 325A I(C) | STR-3/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 375A I(C) | STR-3/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 375A I(C) | STR-3/4
|
|
| 2SD667A |
1A , 120V NPN Plastic Encapsulated Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| 2SC2235TM |
0.8A , 120V NPN Plastic Encapsulated Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| UDT1605G-AB3-R UDT1605L-AB3-R |
120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR
|
Unisonic Technologies
|
| G8051 |
The G8051 is designed for use in 2W output amplifier of portable radios in class B push-pull operation
NPN EPITAXIAL TRANSISTOR
NPN EPITAXIAL PLANAR TRANSISTOR
|
E-Tech Electronics LTD
List of Unclassifed Manufacturers
GTM CORPORATION
|
