PART |
Description |
Maker |
2SC5501A 2SC5501A-4-TR-E |
RF Transistor 10V, 70mA, fT=7GHz, NPN Single MCP4
|
ON Semiconductor
|
2SC5226A 2SC5226A12 ENA1062A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single MCP VHF to UHF Wide-Band Low-Noise Amplifi er Applications
|
ON Semiconductor Sanyo Semicon Device
|
SB007T03C |
30V, 70mA Rectifier Schottky Barrier Diode (Series Connection) 30V/ 70mA Rectifier
|
Sanyo Semiconductor SANYO[Sanyo Semicon Device]
|
IRG4RC10S IRG4RC10 IRG4RC10STR IRG4RC10STRL IRG4RC |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.10V,@和VGE \u003d 15V的,集成电路\u003d 2.0安培 600V DC-1 kHz (Standard) Discrete IGBT in a D-Pak package
|
International Rectifier, Corp. IRF[International Rectifier]
|
IRG4PH30 IRG4PH30K |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 3.10V,@和VGE \u003d 15V的,集成电路\u003d 10A条) 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
|
IRG4BC10S IRG4BC10SPBF |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A) 绝缘栅双极晶体管IGBT的标准速度VCES和\u003d 600V电压的Vce(on)typ.1.10V @和VGE \u003d 15V的,集成电路\u003d 2.0安培 600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
|
2SC4863 2SC4863-5 2SC4863-3 |
TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 70MA I(C) | SOT-323 晶体管|晶体管|叩| 8V的五(巴西)总裁|提供70mA一(c)|SOT - 323 VHF to UHF Wide-Band Low-Noise Amp Applications
|
Sanyo Electric Co., Ltd. SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
|
KX020N06 |
VDS (V) = 60V ID = 2 A (VGS = 10V) RDS(ON) 200m (VGS = 10V)
|
TY Semiconductor Co., L...
|
2SB1396 2SB1396S |
TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 3A I(C) | SOT-89 DC-DC Converter,Motor Driver Applications
|
Sanyo Semicon Device
|
FC803 |
30V/ 70mA Rectifier 30V, 70mA Rectifier
|
SANYO[Sanyo Semicon Device]
|
OC70 OC75 OC66 2N217 OC74 OC65 OC73 OC76 OC77 OC78 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 10MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 150MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 300MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 300MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 250MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 200MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-5 TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-5 68HC11/Bidirectional-Compatible µP Reset Circuit TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 18V的五(巴西)总裁| 500mA的一(c)|
|
APEM SA
|