| PART |
Description |
Maker |
| MJH11019G MJH11018G |
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS 15 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-218
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS 15 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-218
|
ON Semiconductor
|
| CY14B104K-ZS45XI CY14B104K-ZS25XI CY14B104K-ZS25XI |
4-Mbit (512 K x 8/256 K x 16) nvSRAM with Real Time Clock 25 ns and 45 ns access times
|
Cypress Semiconductor
|
| IDT84036 6116LA15SOGI8 6116LA20SOGI8 6116LA15TPGI8 |
5.0V 2K x 8 Asynchronous Static RAM
High-speed access and chip select times
|
Integrated Device Technology, Inc.
Integrated Device Techn...
|
| T7000425 T7002025 T7000225 T7001335 T7002235 T7000 |
Phase Control SCR (250-350 Amperes 200-2200 Volts) 550 A, 1200 V, SCR
Phase Control SCR (250-350 Amperes 200-2200 Volts) 470 A, 1800 V, SCR
Phase Control SCR (250-350 Amperes 200-2200 Volts) 470 A, 1000 V, SCR
Phase Control SCR (250-350 Amperes 200-2200 Volts) 470 A, 2000 V, SCR
Phase Control SCR (250-350 Amperes 200-2200 Volts) 550 A, 600 V, SCR
Phase Control SCR (250-350 Amperes 200-2200 Volts) 550 A, 200 V, SCR
Phase Control SCR (250-350 Amperes 200-2200 Volts) 第一阶段控制晶闸管（250-350安培200-2200伏特
Phase Control SCR (250-350 Amperes 200-2200 Volts) 550 A, 2200 V, SCR
|
Powerex Power Semicondu...
Powerex Power Semiconductor...
PHOENIX CONTACT Deutschland GmbH
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
http://
|
| R6031.522PSYA R6221.530PSYA R6220.530PSYA R9GS2010 |
220 A, 150 V, SILICON, RECTIFIER DIODE R60, 1 PIN
300 A, 150 V, SILICON, RECTIFIER DIODE R62, 2 PIN
300 A, 50 V, SILICON, RECTIFIER DIODE R62, 2 PIN
1000 A, 2000 V, SILICON, RECTIFIER DIODE R9G, 2 PIN
350 A, 2200 V, SILICON, RECTIFIER DIODE
100 A, 200 V, SILICON, RECTIFIER DIODE
200 A, 1500 V, SILICON, RECTIFIER DIODE
1500 A, 1200 V, SILICON, RECTIFIER DIODE
125 A, 800 V, SILICON, RECTIFIER DIODE
150 A, 1200 V, SILICON, RECTIFIER DIODE
400 A, 200 V, SILICON, RECTIFIER DIODE
800 A, 3200 V, SILICON, RECTIFIER DIODE
350 A, 700 V, SILICON, RECTIFIER DIODE
400 A, 900 V, SILICON, RECTIFIER DIODE
100 A, 1500 V, SILICON, RECTIFIER DIODE
1000 A, 1500 V, SILICON, RECTIFIER DIODE
1000 A, 1700 V, SILICON, RECTIFIER DIODE
800 A, 3100 V, SILICON, RECTIFIER DIODE
250 A, 50 V, SILICON, RECTIFIER DIODE
800 A, 3600 V, SILICON, RECTIFIER DIODE
330 A, 500 V, SILICON, RECTIFIER DIODE
|
Powerex, Inc.
POWEREX INC
|
| MJ10021 ON1972 MJ10020 |
From old datasheet system
60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS
|
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| AD7910AKS-500RL7 AD7920AKS-500RL7 AD7920AKS-REEL7 |
250 kSPS, 10-/12-Bit ADCs in 6-Lead SC70 250 kSPS的，10-/12-Bit模数转换引脚SC70
250 kSPS, 10-/12-Bit ADCs in 6-Lead SC70 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL ACCESS, PDSO6
|
Analog Devices, Inc.
|
| CM200TU-5F |
Trench Gate Design Six IGBTMOD?/a> 200 Amperes/250 Volts
Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts
Trench Gate Design Six IGBTMOD 200 Amperes/250 Volts
Trench Gate Design Six IGBTMOD200 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| IRKHF112-06GN IRKKF112-06GN IRKLF111-02CM IRKLF111 |
250 A, 600 V, SCR
250 A, 200 V, SCR
|
|
| APT30D20SG APT30D20B APT30D20B_05 APT30D20BG APT30 |
30 A, 200 V, SILICON, RECTIFIER DIODE, TO-247
Fast Recovery Epitaxial Diode; Package: D3 [S]; IO (A): 30; VR (V): 200; trr (nsec): 21; VF (V): 1.1; Qrr (nC): 150; 30 A, 200 V, SILICON, RECTIFIER DIODE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Advanced Power Technolo...
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
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