PART |
Description |
Maker |
GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
Toshiba Semiconductor
|
GT8G151 |
IGBT for strobe flash
|
TOSHIBA
|
RJP4010AGE |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
RJP4002ASA-00-Q0 RJP4002ASA |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
GT20G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT20G101SM E001913 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
GT25G101SM E001917 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
GT8G121 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
GT20G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
GT20G102SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
CY25AAJ-8 CY25AAJ-8F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Nch IGBT for STROBE FLASHER
|
Mitsubishi Electric Corporation POWEREX [Powerex Power Semiconductors] POWEREX[Powerex Power Semiconductors]
|
CY20AAJ-8F |
GTS03024-2s-025 N沟道IGBT的的频闪闪光 Nch IGBT for STROBE FLASHER Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Powerex, Inc. Powerex Power Semiconductors Cypress Semiconductor Mitsubishi Electric Corporation
|