PART |
Description |
Maker |
BLF6G27S-4508 BLF6G27S-45 BLF6G27-45 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. WiMAX power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLL6H0514-25 |
LDMOS driver transistor BLL6H0514-25<SOT467C (LDMOST)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,; LDMOS driver transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
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NXP Semiconductors N.V.
|
LB421-14 |
RF POWER LDMOS TRANSISTOR SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
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Polyfet RF Devices
|
MAPLST1617-030CF MAPLST1617-030CF-15 |
LDMOS RF Line Power FET Transistor LDMOS RF Line Power FET Transistor 30 W , 1600-1700 MHz, 28V
|
M/A-COM Technology Solu...
|
PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫 LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
BLF6G22LS-180RN |
Power LDMOS Transistor
|
Philips Semiconductors
|
BLF8G20LS-140GV |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF8G27LS-100P-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLP15M7160P-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF7G15LS-200 |
Power LDMOS transistor
|
NXP Semiconductors N.V.
|