PART |
Description |
Maker |
STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
|
Electronics Industry Public Company Limited EIC Semiconductor EIC[EIC discrete Semiconductors] EIC discrete Semiconduc...
|
HCF4006B HCF4006BC1 HCF4006BEY HCF4006BM1 HCC_HCF4 |
18-STAGE STATIC SHIFT REGISTER MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):28mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Drain-Source Breakdown Voltage:60V 18 -阶段静态移位寄存器
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics ST Microelectronics
|
EE2-5NU EE2-12NUX-R EE2-12NUX-L EE2-12NUX EE2-12NU |
POWER/SIGNAL RELAY, DPDT, LATCHED, 12VDC (COIL), 2A (CONTACT), 220VDC (CONTACT), SURFACE MOUNT-STRAIGHT High Insulation, High breakdown voltage, compact and lightweight, Surface mounting type Compact and lightweight High breakdown voltage Surface mounting type Replaced by PCM1602A : 105dB SNR 6-Channel Audio DAC 48-LQFP OSC 5V SMT PLAS 14X9 CMOS 105dB SNR 8-Channel Audio DAC 28-SSOP/QSOP -25 to 70 Replaced by PCM1754 : 97dB SNR Stereo DAC 14-SOIC Replaced by PCM1609A : 105dB SNR 8-Channel Audio DAC 48-LQFP 105dB SNR 8-Channel Audio DAC 48-LQFP -25 to 85 Serial Interrupt Stream Deserializer 48-LQFP Compact and lightweight, High breakdown voltage, Surface mounting type 小巧轻盈,击穿电压高,表面安装型 Replaced by PCM1798 : 106dB SNR Stereo DAC 28-SSOP 小巧轻盈,击穿电压高,表面安装型 Compact and lightweight/ High breakdown voltage/ Surface mounting type
|
NEC TOKIN CORP NEC[NEC] NEC Corp. NEC, Corp.
|
STP5NK65Z STP5NK65ZFP |
N-CHANNEL 650V 1.5 OHM 5A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFET N-CHANNEL 650V 1.5 OHM 5A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFET JFET; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:100mA; Gate-Source Cutoff Voltage Max, Vgs(off):-9V; Continuous Drain Current, Id:100mA; Current Rating:100mA; Gate-Source Breakdown Voltage:-25V RoHS Compliant: No N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESHPower MOSFET N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESH⑩Power MOSFET N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESH?Power MOSFET
|
ST Microelectronics 意法半导 STMICROELECTRONICS[STMicroelectronics]
|
BAS85 |
Low forward voltage High breakdown voltage Guard ring protected
|
TY Semiconductor Co., Ltd
|
2SC4505 |
High breakdown voltage. (BVCEO = 400V) Low saturation voltage
|
TY Semiconductor Co., Ltd
|
2SA1514K |
High breakdown voltage.Collector-base voltage VCBO -120 V
|
TY Semiconductor Co., Ltd
|
HDPE15U60G |
High breakdown voltage
|
SemiHow Co.,Ltd.
|
HDS20U30GW |
High Breakdown Voltage
|
SemiHow Co.,Ltd.
|
2SA1257 |
High breakdown voltage. Small output capacitance.Collector-base voltage VCBO -180 V
|
TY Semiconductor Co., Ltd
|
MMSTA42 |
NPN High Voltage Amplifier High breakdown voltage
|
TY Semicondutor TY Semiconductor Co., Ltd
|
2SC5036 2SC5036A |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
PANASONIC[Panasonic Semiconductor]
|