| PART |
Description |
Maker |
| CMPA601C025D |
25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA2735075F CMPA2735075F-TB |
75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA2060025D |
25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA0060025D |
25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| GM20022010D |
GaN MMIC
|
RFHIC
|
| CGHV1J070D |
70 W, 18.0 GHz, GaN HEMT Die
|
Cree, Inc
|
| TGA2624-CP TGA2624-CP-15 |
9 to 10 GHz, 16 W GaN Power Amplifier
|
TriQuint Semiconductor
|
| SSW208 |
DC-4 GHz, High Isolation GaAs MMIC SPDT Switch DC - 4型频率，高隔离的GaAs MMIC SPDT开
|
Stanford Microdevices
|
| HMMC-3004 |
DC-16 GHz GaAs HBT MMIC Divide-by-4 Prescaler(DC-16 GHz 砷化镓HBT单片微波集成电路定标
DC-16 GHz GaAs HBT MMIC Divide-by-4 Prescaler(DC-16 GHz 砷化镓HBT单片微波集成电路4定标
|
Agilent(Hewlett-Packard)
|
| T1G6000528-Q3 T1G6000528-Q3-EVB3 |
7W, 28V, DC ?6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
|
