| PART |
Description |
Maker |
| EN3235A 2SC4482U-AN 2SC4482T-AN |
Bipolar Transistor 20V, 5A, Low VCE(sat), NPN Single NMP
|
ON Semiconductor
|
| ZXTN19020D ZXTN19020DG ZXTN19020DGTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
20V NPN high gain transistor in SOT223
|
Zetex Semiconductors
Diodes Incorporated
|
| WP-MK-X2011-868 RS-MK-X2010 WP-MK-X2010-434 WP-MK- |
MOSFET DUAL N-CHAN 20V SOT-26
TRANS NPN BIPOLAR 300MW SOT26
TRANS PNP BIPOLAR 300MW SOT26
TRANSISTOR NPN 40V SOT363
High Integrity FM Transceiver
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
Round Solutions
|
| ZXT11N20DFTA ZXT11N20DFTC ZXT11N20DF |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
20V NPN SILICON LOW SATURATION TRANSISTOR
NPN Low Sat Transistor
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| DCP69 DCP69-13 DCP69-16 DCP69-16-13 |
20V PNP SURFACE MOUNT TRANSISTOR
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
|
Diodes Incorporated
|
| 2SB1386 2SB1412 2SB1326 A5800356 2SB1436 |
From old datasheet system
Low Frequency Transistor(-20V/-5A)
Low Frequency Transistor(-20V,-5A) 低频晶体管（- 20V的，- 5A型）
|
Rohm
Toshiba, Corp.
|
| CSB1436R CSB1436P CSB1436 |
1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 390 hFE.
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-126 晶体管|晶体管|进步党| 20V的五（巴西）总裁| 5A条一（c）|26
1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 180 hFE.
|
Electronic Theatre Controls, Inc.
Continental Device India Limited
|
| MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
|
ON Semiconductor
|
| FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五（巴西）总裁|甲一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五（巴西）总裁| 400mA的一（c）|
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC
Fujitsu, Ltd.
Bourns, Inc.
Amphenol, Corp.
|
| 2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132 |
Medium Power Transistor 中等功率晶体
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62
From old datasheet system
Medium Power Transistor (-32A,-1A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
| IRGP4066D-EPBF IRGP4066DPBF IRGP4066DPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
