PART |
Description |
Maker |
2SD2678 |
3A / 12V Bipolar transistor
|
Rohm
|
AT-42036 AT-42036-TR1 AT-42036-BLK |
AT-42036 · General purpose transistor Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
ENA1286A |
Bipolar Transistor -12V, -3A, Low VCE(sat), PNP Single MCPH6
|
ON Semiconductor
|
EN7645 |
Bipolar Transistor, (-12V)15V, (-1A)1.4A, Low VCE(sat) Complementary Dual MCPH6
|
ON Semiconductor
|
2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor Bipolar Transistor Adoption of FBET, MBIT processes Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC ROHM[Rohm]
|
CPH6223-TL-E |
Bipolar Transistor Bipolar Transistor (.)50V, (.)3A, Low VCE(sat), (PNP)NPN Single CPH6
|
ON Semiconductor
|
208-930-21-38 208-997-21-38 208-532-21-38 208-501- |
LED TELEPHONE SLIDE LED TELEFONSOCKEL T6.8 12V GRUEN LED TELEFONSOCKEL T6.8 12V ROT LED TELEFONSOCKEL T6.8 12V GELB LED TELEFONSOCKEL T6.8 12V BLAU 发光二极管TELEFONSOCKEL T6.8 12V的布
|
TE Connectivity, Ltd.
|
L7805CV L7812CV L7812 |
POSITIVE VOLTAGE REGULATORS From old datasheet system VOLT REGULATOR,FIXED, 12V,BIPOLAR,SIP,3PIN,PLASTIC VOLT REGULATOR,FIXED, 5V,BIPOLAR,SIP,3PIN,PLASTIC
|
SGS Thomson Microelectronics ST Microelectronics
|
IRG4BC29K IRG4BC30K IRG4BC30 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
CT30SM-12 CT30SM-1 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR GENERAL INVERTER UPS USE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V GENERAL INVERTER . UPS USE
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|