| PART |
Description |
Maker |
| MSC0211GE |
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
|
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|
| MSC0207GE |
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
|
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|
| K3296 2SK3296 2SK3296-ZK 2SK3296-ZJ 2SK3296-S |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,35A I(D),TO-220AB
MOS FIELD EFFECT TRANSISTOR
Power MOS FET
|
NEC Corp.
NEC[NEC]
|
| CES2301 |
-20V P Channel MOS - 20V的P通道马鞍
|
Rochester Electronics, LLC
|
| BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| MSP2321 |
-20V(D-S) P-Channel Enhancement Mode Power MOS FET
|
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|
| MSP2301 |
-20V(D-S) P-Channel Enhancement Mode Power MOS FET
|
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|
| FDS9933BZ |
-20V Dual P-Channel 2.5V Specified PowerTrenchMOSFET
Dual P-Channel 2.5V Specified PowerTrench㈢ MOSFET
Dual P-Channel 2.5V Specified PowerTrench? MOSFET
|
Fairchild Semiconductor
|
| FDG6332C FDG6332CNL |
Tantalum Molded Capacitor; Capacitance: 220uF; Voltage: 6.3V; Packaging: Tape & Reel 700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
20V N & P-Channel PowerTrench MOSFETs
20V N &P - Channel Power Trench MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| AON3806 AON380612 |
20V Dual N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
