| PART |
Description |
Maker |
| CXG1174UR |
Hight Frequency Switch
High Power SP3T Switch with Logic Control
|
Sony Corporation
|
| CXG1144AEN |
Hight Frequency Switch
High Power DPDT Switch with Logic Control
|
Sony Corporation
|
| CXG1172UR |
JPHEMT High Power DPDT Switch with Logic Control
Hight Frequency Switch
|
Sony Corporation
|
| HBR20100CB HBR20100CHF HBR20100CRMR HBR20100CS HBR |
High frequency switch power supply
|
JILIN SINO-MICROELECTRO...
|
| IRFH7185PBF-15 |
Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies
|
International Rectifier
|
| ADP3801 ADP3801AR ADP3802 ADP3802AR |
500 kHz, High Frequency Switch Mode Dual Li-Ion Battery Charger
200 kHz, High Frequency Switch Mode Dual Li-Ion Battery Charger
High Frequency Switch Mode Dual Li-Ion Battery Chargers
|
AD[Analog Devices]
|
| 50N06-TA3-T 50N06-TF3-T 2SA102005 2SA1797-X-AA3-R |
SILICON PNP EPITAXIAL TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
SILICON PNP EPITAXIAL TRANSISTOR 进步党硅外延晶体
REVERSIBLE MOTOR DRIVER
NPN EPITAXIAL PLANAR TRANSISTOR
HIGH CURRENT SWITCHIG APPLICATIONS
HIGH CURRENT SWITCHING APPLICATIONS
HIGH VOLTAGE NPN TRANSISTOR
HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR
NPN SILICON TRANSISTOR
HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING (6V, 50mA)
HIGH-FREQUENCY AMPLIFIER TRANSISTOR
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR
SILICON PNP TRANSISTOR
LOW FREQUENCY PNP TRANSISTOR
MEDIUM POWER LOW VOLTAGE TRANSISTOR
MEDIUM POWER TRANSISTOR
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL PLANAR TRANSISTOR
50 Amps, 60 Volts N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES CO LTD
??『绉???′唤??????
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| PC33981PNA_R2 MC33981 33981 PC33981PNA/R2 |
HIGH-FREQUENCY, HIGH-CURRENT, SELF-PROTECTED HIGH-SIDE SWITCH (4.0 Mз UP TO 60 KHZ)
High-Frequency, High-Current, Self-Protected High-Side Switch (4.0 m up to 60 kHz)
|
MOTOROLA[Motorola, Inc]
|
| CXG1012N |
High-Frequency SPTD Antenna Switch
|
SONY
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| KTC2803 |
EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO FREQUENCY HIGH FREQUENCY POWER AMPLIFIER)
|
KEC[KEC(Korea Electronics)]
|
|
