| PART |
Description |
Maker |
| SVD5N60AF SVD5N60AT |
5A, 600V NCHANNEL MOSFET
|
Silan Microelectronics Joint-stock
|
| NTP27N06 NTB27N06 NTB27N06T4 |
Power MOSFET 27 Amps, 60 Volts N-Channel TO-220 and D2PAK
Power MOSFET 27 Amps, 60 Volts N?Channel TO?220 and D2PAK
Power MOSFET 27 Amps / 60 Volts NChannel TO220 and D2PAK
LASER MOD 670NM .95MW MVP ROUND
LASER MOD 635NM 4.9MW VHK ROUND 27 A, 60 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ONSEMI[ON Semiconductor]
|
| STS4DPF20L 8006 |
DUAL P-CHANNEL 20V - 0.07 OHM - 4A SO-8 STRIPFET POWER MOSFET
DUAL P-CHANNEL 20V - 0.07 ohm - 4A SO-8 STripFET⑩ POWER MOSFET
From old datasheet system
DUAL P-CHANNEL 20V - 0.07 OHM - 4A SO-8 STRIPFET POWER MOSFET
Dual P-CHANNEL POWER MOSFET
DUAL P-CHANNEL 20V - 0.07 ohm - 4A SO-8 STripFETPOWER MOSFET 双P沟道20V 0.07欧姆- 4A条的SO - 8 STripFET⑩功率MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| HS9-4423BRH HS9-4423BRH-8 HS-4423BRH HS9-4423BRH-Q |
Radiation Hardened Dual, Inverting Power MOSFET Drivers 2 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, CDFP16
Radiation Hardened Dual/ Inverting Power MOSFET Drivers
|
Intersil, Corp.
Intersil Corporation
|
| NTHD5904T1 NTHD5904NT3G |
Power MOSFET 20 V, 3.1 A, N-Channel Dual ChipFET™
POWER MOSFET DUAL N-CHANNEL
|
ON Semiconductor
|
| FST71100SM FST7135SM FST7160SM FST7180SM FST7120SM |
70A, 20V ultra fast recovery rectifier
70 Amp Rectifier 20 to 100 Volts Schottky Barrier
MOSFET; Transistor Polarity:N Channel; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
MOSFET, DUAL NN SO-8MOSFET, DUAL NN SO-8; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:7.5A; Current, Idm pulse:30A; Power, Pd:1.1W; Resistance, Rds on:0.022R; SMD:1;
|
MCC[Micro Commercial Components]
Micro Commercial Components Corp.
|
| APTC60TDUM35PG |
Triple dual Common Source Super Junction MOSFET Power Module 72 A, 600 V, 0.035 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
http://
|
| AUIRF2905ZSTRL AUIRF2905ZSTRR AUIRFR2905ZTR AUIRFR |
HEXFET垄莽 Power MOSFET
HEXFET庐 Power MOSFET
HEXFET? Power MOSFET
42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra Low On-Resistance
|
International Rectifier
List of Unclassifed Man...
|
| APTC80DDA29T3G |
Dual Boost chopper Super Junction MOSFET Power Module 15 A, 800 V, 0.29 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APTC60DSKM70T3 |
39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Dual buck chopper Super Junction MOSFET Power Module
|
ADPOW[Advanced Power Technology]
|
