| PART |
Description |
Maker |
| T2G6001528-Q3 |
18W, 28V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CGH35060F1-AMP |
60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access
|
Cree, Inc
|
| CGH35015F |
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
| RA18H1213G RA18H1213G-01 |
1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO 1.24 - 1.30GHz 18W 12.5V阶段制造。对于移动通信
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TGA2611 TGA2611-15 |
2 to 6 GHz GaN LNA
|
TriQuint Semiconductor
|
| CGHV27015S-AMP1 CGHV27015S-TR |
15 W, DC - 6.0 GHz, 50 V, GaN HEMT
|
Cree, Inc
|
| QPL1002 QPL1002EVB |
0.03 ?3 GHz GaN LNA
|
TriQuint Semiconductor
|
| CGH27030S CGH27030S-AMP1 CGH27030S-AMP2 |
30 W, DC - 6.0 GHz, 28 V, GaN HEMT
|
Cree, Inc
|
| TGA2611-SM-15 |
2 6 GHz GaN LNA
|
TriQuint Semiconductor
|
| CGHV1F006S |
6W, DC - 18 GHz, 40V, GaN HEMT
|
Wolfspeed
|
| CMPA601C025D |
25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
|
