| PART |
Description |
Maker |
| HYMD232G726L8-L HYMD232G726L8-K HYMD232G7268 HYMD2 |
Registered DDR SDRAM DIMM
32Mx72|2.5V|K/H/L|x9|DDR SDRAM - Registered DIMM 256MB 32Mx72 | 2.5V的| /升| X9热卖| DDR SDRAM内存-内存256MB的注
|
Hynix Semiconductor
ON Semiconductor
|
| WED3EG72M32S403JD3SG WED3EG7232S-JD3 WED3EG72M32S2 |
256MB - 32Mx72 DDR SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3EG7236S-D3 W3EG7236S265D3 W3EG7236S202D3 W3EG723 |
256MB - 32Mx72 DDR SDRAM REGISTERED, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3EG7234S262D3 W3EG7234S-D3 W3EG7234S265JD3 W3EG72 |
256MB - 32Mx72 DDR SDRAM REGISTERED, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| NT256S72V89A0G-75B NT256S72V89A0G-7K NT256S72V89A0 |
256Mb: 32Mx72 SDRAM module based on 32Mx8, 4Banks, 8K refresh, 3.3V synchronous DRAM with SPD
|
NANYA
|
| HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K H |
DDR SDRAM - 256Mb
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
|
HYNIX[Hynix Semiconductor]
|
| HYS64D16000GDL-8-B HYS64D16000GDL-6-B HYS64D16000G |
DDR SDRAM Modules - 256MB (32Mx64) PC3200 2-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2100 2-bank
200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
| HYMD232646B8J-D4 HYMD232646B8J-D43 HYMD232646B8J-J |
DDR SDRAM - Unbuffered DIMM 256MB
32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor, Inc.
|
| HYMD132645D8J-D4 HYMD132645D8J-D43 HYMD132645D8J-J |
DDR SDRAM - Unbuffered DIMM 256MB
32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor, Inc.
|
| M470L3224DT0-LB0 M470L3224DT0-CB3 M470L3224DT0-CB0 |
256MB DDR SDRAM MODULE 256MB的DDR内存模块
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| W3DG7234V7D2 W3DG7234V10D2 W3DG7234V75D2 W3DG7234V |
256MB- 32Mx72 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
