| PART |
Description |
Maker |
| M36WT8B10ZA6T M36WV8B10ZA6T M36WT864T85ZA6T M36WV8 |
64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
64 Mbit 4Mb x16 / Multiple Bank / Burst Flash Memory and 8 Mbit 512K x16 SRAM / Multiple Memory Product
64 MBIT (4MB X16, MULTIPLE BANK, BURST) FLASH MEMORY AND 8 MBIT (512K X16) SRAM, MULTIPLE MEMORY PRODUCT
|
ST Microelectronics
|
| SST39VF3201-90-4I-EK SST39VF6401-90-4I-EK SST39VF1 |
10-Element Bar Graph Array
CAT5E PATCH CORD 100MHZ 4 FOOT WHITE
CAT5E PATCH CORD 30 FOOT BLACK
CAT5E PATCH CORD 100MHZ 1 FOOT WHITE
QF50 SRf DIN 41651 Std LoPro 34Ckt
CAT5E PATCH CORD 50 FOOT BLACK
LED Light Bars
CAT5E PATCH CORD 100MHZ 3 FOOT WHITE
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 90 ns, PDSO48
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
SCOPEMETER 200MHz, 2.5GS/s,B/W with SCC kit, Z540 CALIBRATION RoHS Compliant: NA 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 4M X 16 FLASH 2.7V PROM, 70 ns, PBGA48
CAT5E PATCH CORD 30 FOOT BLACK 4M X 16 FLASH 2.7V PROM, 70 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 16 FLASH 2.7V PROM, 90 ns, PDSO48
KJL 41C 41#20 PIN RECP 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 4M X 16 FLASH 2.7V PROM, 90 ns, PDSO48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 16 FLASH 2.7V PROM, 70 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 70 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 4M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
|
Silicon Storage Technology, Inc.
PROM
SILICON STORAGE TECHNOLOGY INC
|
| CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72）流体系结构，通过与总线延迟（带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72）流的SRAM
|
Cypress Semiconductor Corp.
|
| M36D0R6040T0ZAIT M36D0R6040B0ZAI M36D0R6040B0ZAIE |
64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| SST39VF040-70-4C-B3KE SST39VF040-70-4C-WHE SST39VF |
64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 2.7V PROM, 70 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 2.7V PROM, 70 ns, PDSO32
64 Mbit (x16) Multi-Purpose Flash Plus 128K X 8 FLASH 2.7V PROM, 70 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 512K X 8 FLASH 2.7V PROM, 70 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 128K X 8 FLASH 2.7V PROM, 70 ns, PQCC32
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| M36DR432C M36DR432CA10ZA6T M36DR432CA85ZA6T M36DR4 |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M36DR432DA10ZA6T |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
|
http://
|
| M36W432 M36W432B M36W432B70ZA1T M36W432B70ZA6T M36 |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| M58LR128GU |
The M58LR128GU/L and M58LR256GU/L are 128 Mbit (8 Mbit x16) and 256 Mbit (16 Mbit
|
ST Microelectronics, Inc.
|
| M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM
512K X 8 UVPROM, 100 ns, CDIP40
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M36W832TE70ZA1T M36W832TE85ZA1T M36W832TE-ZAT M36W |
SPECIALTY MEMORY CIRCUIT, PBGA66
32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
|
SGS Thomson Microelectronics
NUMONYX
意法半导
ST Microelectronics
|
| NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
