PART |
Description |
Maker |
SI7392DP-T1 SI7392DP |
N-Ch. Reduced Qg, Fast Switching WFET® VDS = 30V; VGS = ± 20V N沟道Qg,快速开关WFET ® ,VDS=30V; VGS=±20V N-Channel Reduced Qg, Fast Switching WFET N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc. VISAY[Vishay Siliconix]
|
KO3402 AO3402 |
VDS (V) = 30V ID= 4 A RDS(ON) 55m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V)
|
TY Semiconductor Co., Ltd
|
KI1903DL |
Drain-source voltage Vds -20V Gate-source voltage Vgs -12V
|
TY Semiconductor Co., L...
|
KX7N10L |
VDS (V) = 100V RDS(ON) 350m (VGS = 10V), ID=0.85A RDS(ON) 380m (VGS = 5V), ID=0.85A
|
TY Semiconductor Co., Ltd
|
ST26C32 ST26C32CF16 ST26C32CP16 ST26C32IF16 ST26C3 |
QUAD RS-422, RS-423 CMOS Differential Line Receiver LINE RECEIVER, PDSO16 MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:13.4A; On-Resistance, Rds(on):0.0065ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC; Leaded Process Compatible:No
|
Exar, Corp. EXAR[Exar Corporation]
|
KXU05N25 |
VDS (V) = 250V RDS(ON) 1 (VGS = 10V) Drain-Source Voltage VDSS 250 V
|
TY Semiconductor Co., Ltd
|
KXU03N25 |
VDS (V) = 250V RDS(ON) 2 (VGS = 10V) Drain-Source Voltage VDSS 250 V
|
TY Semiconductor Co., Ltd
|
IRF7831PBF IRF7831TRPBF IRF7831PBF-15 |
Ultra-Low Gate Impedance HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mΩ@VGS = 10V , Qg(typ.) = 40nC ) HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mヘ@VGS = 10V , Qg(typ.) = 40nC ) High Frequency Point-of-Load Synchronous Buck Converter
|
International Rectifier
|
KI4511DY |
TrenchFET Power MOSFET Drain-Source Voltage Vds 20V
|
TY Semiconductor Co., Ltd
|
KRF8910 |
Drain- Source Voltage VDS 20 V Gate-to-Source Voltage VGS -20 V
|
TY Semiconductor Co., Ltd
|
NDH8436 |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 5.8 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V N-Channel Enhancement Mode Field Effect Transistor
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FAIRCHILD[Fairchild Semiconductor]
|