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UT6164CJC-10 - Access time: 10 ns, 8 K x 8 Bit high speed CMOS SRAM Access time: 12 ns, 8 K x 8 Bit high speed CMOS SRAM Access time: 15 ns, 8 K x 8 Bit high speed CMOS SRAM

UT6164CJC-10_8342846.PDF Datasheet


Part No.	UT6164CJC-10 UT6164CJC-12 UT6164CJC-15
Description	Access time: 10 ns, 8 K x 8 Bit high speed CMOS SRAM Access time: 12 ns, 8 K x 8 Bit high speed CMOS SRAM Access time: 15 ns, 8 K x 8 Bit high speed CMOS SRAM
File Size	187.54K / 10 Page
Maker	UTRON Technology
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Full text search : Access time: 10 ns, 8 K x 8 Bit high speed CMOS SRAM Access time: 12 ns, 8 K x 8 Bit high speed CMOS SRAM Access time: 15 ns, 8 K x 8 Bit high speed CMOS SRAM

Product Description search : Access time: 10 ns, 8 K x 8 Bit high speed CMOS SRAM Access time: 12 ns, 8 K x 8 Bit high speed CMOS SRAM Access time: 15 ns, 8 K x 8 Bit high speed CMOS SRAM

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PART	Description	Maker
WE128K32N-120G2TC WE128K32N-120G2TCA WE128K32N-120	Access time:120 ns; 128K x 32 EEPROM module, SMD 5962-94585 Access time:150 ns; 128K x 32 EEPROM module, SMD 5962-94585 Access time:200 ns; 128K x 32 EEPROM module, SMD 5962-94585 Access time:140 ns; 128K x 32 EEPROM module, SMD 5962-94585 Access time:300 ns; 128K x 32 EEPROM module, SMD 5962-94585 Access time:250 ns; 128K x 32 EEPROM module, SMD 5962-94585 Access time:240 ns; 128K x 32 EEPROM module, SMD 5962-94585	White Electronic Designs
A67L7332SERIES A67L7336SERIES A67L8316SERIES A67L8	Cycle time:7ns; access time:4.5ns; 256K x 16 LVTTL, pipelined DBA SRAM Cycle time:7ns; access time:4ns; 256K x 16 LVTTL, pipelined DBA SRAM Cycle time:7ns; access time:4.2ns; 256K x 16 LVTTL, pipelined DBA SRAM Cycle time:7ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM Cycle time:7ns; access time:4ns; 128K x 32 LVTTL, pipelined DBA SRAM 256K X 16/18. 128K X 32/36 LVTTL. Pipelined DBA SRAM 256 × 16/18128K的X 32/36 LVTTL等级。流水线数据库管理员的SRAM 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM Cycle time:7ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM Cycle time:7.5ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM Cycle time:8.5ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM	AMIC Technology, Corp.
5962R-0323502QUA 5962R-0323501VUC 5962R-0323502QUC	512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). 512K x 18 SRAM. 15ns access time. Lead finish hot gold. 512K x 18 SRAM. 15ns access time. Lead finish hot solder dipped. 512K x 18 SRAM. 15ns access time. Lead finish gold. Prototype flow. 512K x 18 SRAM. 15ns access time. Lead finish factory option. 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si).	Aeroflex Circuit Technology
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5962R-TBD01VTBDA 5962R-TBD01VTBDC 5962R-TBD01VTBDX	256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si).	Aeroflex Circuit Technology

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